IP Library Granted Patent US 12,451,802
Granted Patent B2
US 12,451,802 · App. 18/179,267 · Granted Oct 21, 2025

High voltage switching regulator with n-channel high-side switches

Inventor: Bai Nguyen (Fremont, CA)
Assignee: Empower Semiconductor, Inc.
H02M3/155H02M1/08H02M3/01H02M3/1588
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Quick Facts
Patent No.
US 12,451,802
App. No.
18/179,267
Granted
Oct 21, 2025
Kind
B2
Abstract

A circuit. In one aspect, the circuit includes a power input terminal and an output terminal, a high-side circuit coupled between the power input terminal and the output terminal, where the high-side circuit includes a first plurality of serially connected switches, and a low-side circuit coupled between the output terminal and a ground, where the low-side circuit includes a second plurality of serially connected switches, where a first voltage between the power input terminal and the output terminal is distributed across the first plurality of serially connected switches, where a second voltage between the output terminal and the ground is distributed across the second plurality of serially connected switches. In another aspect, the high-side and low-side circuits are arranged to limit a maximum voltage applied to each of the first plurality of switches and second plurality of switches to a fraction of a voltage at the power input terminal.

Claims (34)

1. A circuit comprising:

a power input terminal and an output terminal;

a high-side circuit coupled between the power input terminal and the output terminal, wherein the high-side circuit includes a first plurality of serially connected switches; and

a low-side circuit coupled between the output terminal and a ground, wherein the low-side circuit includes a second plurality of serially connected switches;

wherein a first voltage between the power input terminal and the output terminal is distributed across the first plurality of serially connected switches;

wherein a second voltage between the output terminal and the ground is distributed across the second plurality of serially connected switches; and

wherein each of the first plurality of serially connected switches are N-channel metal oxide semiconductor transistors (NMOS) and each of the second plurality of serially connected switches are NMOS transistors, and wherein a drain terminal of a first switch of the second plurality of serially connected switches is connected to the output terminal.

2. The circuit of claim 1 , wherein the high-side circuit and the low-side circuit are arranged to limit a maximum voltage applied to each of the first plurality of serially connected switches and each of the second plurality of serially connected switches to a fraction of a voltage at the power input terminal.

3. The circuit of claim 2 , wherein a value of the fraction is ⅓ or less.

4. The circuit of claim 1 , further comprising a first bootstrap circuit that is arranged to be controlled by a first pair of bootstrap control switches that selectively transition the first bootstrap circuit between a charging configuration that charges the first bootstrap circuit, and a discharging configuration that provides a charge for a turn on of a second switch of the first plurality of serially connected switches.

5. A circuit comprising:

a power input terminal and an output terminal;

a high-side circuit coupled between the power input terminal and the output terminal, wherein the high-side circuit includes a first plurality of serially connected switches;

a low-side circuit coupled between the output terminal and a ground, wherein the low-side circuit includes a second plurality of serially connected switches; and

a high-side driver circuit connected to a gate terminal of a first switch of the first plurality of serially connected switches;

wherein a gate terminal of a second switch of the first plurality of serially connected switches is connected to a drain terminal of the first switch of the first plurality of serially connected switches through a first bootstrap capacitor; and

wherein each of the first plurality of serially connected switches are N-channel metal oxide semiconductor transistors (NMOS) and each of the second plurality of serially connected switches are NMOS transistors, and wherein a drain terminal of a first switch of the second plurality of serially connected switches is connected to the output terminal.

6. The circuit of claim 5 , further comprising a low-side driver circuit connected to a gate terminal of a first switch of the second plurality of serially connected switches.

7. The circuit of claim 6 , wherein a gate terminal of a second switch of the second plurality of serially connected switches is connected to the drain terminal of the first switch of the second plurality of serially connected switches through a second bootstrap capacitor.

8. The circuit of claim 5 , wherein the high-side circuit and the low-side circuit are arranged to limit a maximum voltage applied to each of the first plurality of serially connected switches and each of the second plurality of serially connected switches to a fraction of a voltage at the power input terminal.

9. The circuit of claim 8 , wherein a value of the fraction is ⅓ or less.

10. The circuit of claim 5 , further comprising a first bootstrap circuit that is arranged to be controlled by a first pair of bootstrap control switches that selectively transition the first bootstrap circuit between a charging configuration that charges the first bootstrap circuit, and a discharging configuration that provides a charge for a turn on of the second switch of the first plurality of serially connected switches.

11. A circuit comprising:

a power input terminal and an output terminal;

a high-side circuit coupled between the power input terminal and the output terminal, wherein the high-side circuit includes a first plurality of serially connected switches;

a low-side circuit coupled between the output terminal and a ground, wherein the low-side circuit includes a second plurality of serially connected switches; and

wherein a first voltage between the power input terminal and the output terminal is distributed across the first plurality of serially connected switches;

wherein a second voltage between the output terminal and the ground is distributed across the second plurality of serially connected switches;

a high-side driver circuit connected to a gate terminal of a first switch of the first plurality of serially connected switches;

wherein a gate terminal of a second switch of the first plurality of serially connected switches is connected to a drain terminal of the first switch of the first plurality of serially connected switches through a first bootstrap capacitor; and

wherein each of the first plurality of serially connected switches are N-channel metal oxide semiconductor transistors (NMOS) and each of the second plurality of serially connected switches are NMOS transistors, and wherein a drain terminal of a first switch of the second plurality of serially connected switches is connected to the output terminal.

12. The circuit of claim 11 , wherein the high-side circuit and the low-side circuit are arranged to limit a maximum voltage applied to each of the first plurality of serially connected switches and each of the second plurality of serially connected switches to a fraction of a voltage at the power input terminal.

13. The circuit of claim 12 , wherein a value of the fraction is ⅓ or less.

14. The circuit of claim 11 , further comprising a first bootstrap circuit that is arranged to be controlled by a first pair of bootstrap control switches that selectively transition the first bootstrap circuit between a charging configuration that charges the first bootstrap circuit, and a discharging configuration that provides a charge for a turn on of the second switch of the first plurality of serially connected switches.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 6, 2023
From: NGUYEN, BAI
To: EMPOWER SEMICONDUCTOR, INC.
Reel/Frame 062897/0082 →
Continuity (2)
Provisional Application 63317460 · Mar 7, 2022
Related Publication 20230283182A1 · Sep 7, 2023
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