Semiconductor device
A semiconductor device includes: a first connector including a first plate having a first upper surface and a first terminal connected to the first plate, a first plate including a second plate and a third plate, a plate thickness of the second plate being thinner than a plate thickness of the third plate, the third plate being provided between the second plate and the first terminal; a semiconductor chip provided on the first upper surface; a first bonding material provided between the first upper surface and the semiconductor chip; a second connector provided on the semiconductor chip, a third connector, the first plate being provided between the first terminal and the third connector; a second bonding material provided between the second connector and the semiconductor chip; and a third bonding material provided between the second connector and the third connector.
1 . A semiconductor device, comprising:
a first connector including a first plate having a first lower surface and a first upper surface and a first terminal connected to the first plate, the first plate including a second plate and a third plate, a plate thickness of the second plate being thinner than a plate thickness of the third plate, the third plate being provided between the second plate and the first terminal;
a semiconductor chip provided on the first upper surface, the semiconductor chip having a second lower surface facing the first upper surface, a first distance between the first lower surface of the second plate and the second lower surface being shorter than a second distance between the first lower surface of the third plate and the second lower surface;
a first bonding material provided between the first upper surface and the semiconductor chip;
a second connector provided on the semiconductor chip,
a third connector, the first plate being provided between the first terminal and the third connector;
a second bonding material provided between the second connector and the semiconductor chip; and
a third bonding material provided between the second connector and the third connector.
2 . The semiconductor device according to claim 1 , wherein the semiconductor chip has a convex shape on the side where the second connector is provided.
3 . The semiconductor device according to claim 1 ,
wherein the first upper surface has a slope on the first upper surface, and the slope is lowered from the third plate toward the second plate.
4 . The semiconductor device according to claim 3 ,
wherein an area of the slope when viewed from above is larger than an area of the semiconductor chip when viewed from above.
5 . The semiconductor device according to claim 3 ,
wherein an angle formed by the second upper surface of the slope and the first upper surface is preferably 0.2 degrees or more and 3 degrees or less.
6 . The semiconductor device according to claim 1 ,
wherein the second bonding material has a void.
7 . The semiconductor device according to claim 6 ,
wherein a diameter of the void is 1 mm or less.
8 . The semiconductor device according to claim 1 ,
wherein a third upper surface of the semiconductor chip has a first side and a second side facing the first side,
wherein, when viewed from above, the first side is provided between the second side and the third connector, and
wherein a thickness of the second bonding material in the vicinity of the first side is thinner than a thickness of the second bonding material in the vicinity of the second side.
9 . The semiconductor device according to claim 1 ,
wherein a third upper surface of the semiconductor chip has a first side and a second side facing the first side,
wherein, when viewed from above, the first side is provided between the second side and the third connector, and
wherein a thickness of the second bonding material in the vicinity of the first side is thicker than a thickness of the second bonding material in the vicinity of the second side.
10 . A semiconductor device, comprising:
a first connector including a first plate having a first upper surface and a first terminal connected to the first plate, the first plate including a second plate and a third plate, a plate thickness of the second plate being thinner than a plate thickness of the third plate, the third plate being provided between the second plate and the first terminal;
a semiconductor chip provided on the first upper surface;
a first bonding material provided between the first upper surface and the semiconductor chip;
a second connector provided on the semiconductor chip,
a third connector, the first plate being provided between the first terminal and the third connector;
a second bonding material provided between the second connector and the semiconductor chip; and
a third bonding material provided between the second connector and the third connector,
wherein the semiconductor chip has a convex shape on the side where the second connector is provided,
wherein the second bonding material has a void, and
wherein the void is located closer to an edge of the semiconductor chip than an apex of the convex shape.
11 . The semiconductor device according to claim 10 ,
wherein the first upper surface has a slope on the first upper surface, and the slope is lowered from the third plate toward the second plate.
12 . The semiconductor device according to claim 11 ,
wherein an area of the slope when viewed from above is larger than an area of the semiconductor chip when viewed from above.
13 . The semiconductor device according to claim 11 ,
wherein an angle formed by the second upper surface of the slope and the first upper surface is preferably 0.2 degrees or more and 3 degrees or less.
14 . The semiconductor device according to claim 10 ,
wherein a diameter of the void is 1 mm or less.
15 . The semiconductor device according to claim 10 ,
wherein a third upper surface of the semiconductor chip has a first side and a second side facing the first side,
wherein, when viewed from above, the first side is provided between the second side and the third connector, and
wherein a thickness of the second bonding material in the vicinity of the first side is thinner than a thickness of the second bonding material in the vicinity of the second side.
16 . The semiconductor device according to claim 10 ,
wherein a third upper surface of the semiconductor chip has a first side and a second side facing the first side,
wherein, when viewed from above, the first side is provided between the second side and the third connector, and
wherein a thickness of the second bonding material in the vicinity of the first side is thicker than a thickness of the second bonding material in the vicinity of the second side.
17 . The semiconductor device according to claim 10 ,
wherein the first plate has a first lower surface,
wherein the semiconductor chip has a second lower surface facing the first upper surface, and
wherein a first distance between the first lower surface of the second plate and the second lower surface is shorter than a second distance between the first lower surface of the third plate and the second lower surface.