Display apparatus
A display apparatus according to an embodiment of the present disclosure includes: a panel which includes a light emitting area and at least one non-light emitting area; a light emitting device which is disposed in the light emitting area and includes a first electrode, a light emitting stack, and a second electrode; a light converter which partitions an opening of the light emitting area and includes a light conversion material; and a capping layer disposed on the second electrode. The light converter includes a light conversion layer and a light amplifier.
1 . A display apparatus comprising:
a panel which comprises a light emitting area and at least one non-light emitting area;
a light emitting device which is disposed in the light emitting area and comprises a first electrode, a light emitting stack, and a second electrode;
a light converter which partitions an opening of the light emitting area and comprises a light conversion material; and
a capping layer disposed on the second electrode,
a light receiver disposed near the light converter;
wherein the light converter comprises a light conversion layer and a light amplifier and the light receiver comprises a light absorption layer;
wherein a thickness from a top of the light amplifier to a bottom of the second electrode or to a bottom of the capping layer and a thickness from a top of the light absorption layer to the bottom of the second electrode or to the bottom of the capping layer is in a range of 1.275 μm to 6.375 μm so that constructive interference occurs.
2 . The display apparatus of claim 1 , wherein the light conversion layer covers an edge of the first electrode, and the light emitting stack and the second electrode are disposed on the light conversion layer in such a manner as to overlap each other.
3 . The display apparatus of claim 1 , further comprising a planarization layer between the light conversion layer and the light amplifier, wherein the light conversion layer is disposed on the light amplifier and then they overlap each other.
4 . The display apparatus of claim 2 , wherein the light conversion material is a material that absorbs light in a visible light region and emits light in a near-infrared region.
5 . The display apparatus of claim 4 , wherein the near-infrared has a wavelength of 780 nm to 990 nm.
6 . The display apparatus of claim 1 , wherein the light receiver does not overlap at least one of the light conversion layer, the planarization layer, and the light amplifier.
7 . The display apparatus of claim 1 , wherein the light receiver further comprises a reflective electrode.
8 . The display apparatus of claim 4 ,
wherein the second electrode and the capping layer extend over the light conversion layer,
and wherein a part of the light the near-infrared region emitted from the light conversion layer is reflected from an interface between the second electrode and the capping layer, so that the constructive interference occurs.
9 . A display apparatus comprising:
a substrate:
a transistor disposed on the substrate;
an organic light emitting diode disposed on the transistor;
a capping layer disposed on the organic light emitting diode;
an encapsulation part disposed on the capping layer;
a cover glass disposed on the encapsulation part; and
a near-infrared converter which is disposed in the form of matrix and partitions an opening,
a near-infrared light receiver disposed adjacent to the near-infrared converter;
wherein the organic light emitting diode comprises a first electrode, a light emitting stack, and a second electrode,
and wherein the near-infrared converter comprises a light conversion layer and a light amplifier, the near-infrared light receiver comprises a light absorption layer and the capping layer extends to a top of the light conversion layer,
wherein a thickness from a top of the light amplifier to a bottom of the second electrode or to a bottom of the capping layer and a thickness from a top of the light absorption layer to the bottom of the second electrode or to the bottom of the capping layer is in a range of 1.275 μm to 6.375 μm so that constructive interference occurs.
10 . The display apparatus of claim 9 , wherein the light conversion layer comprises a light conversion material, and wherein the light conversion material absorbs light in a visible light region and emits light in a near-infrared region.
11 . The display apparatus of claim 10 , wherein the light in a near-infrared region emitted from the light conversion layer is reflected from a top surface of the light amplifier.
12 . The display apparatus of claim 11 , wherein a part of the light in a near-infrared region reflected from a bottom surface of the capping layer disposed on the light conversion layer meets the light in a near-infrared region reflected from the top surface of the light amplifier, so that the constructive interference occurs.
13 . The display apparatus of claim 1 , wherein the transistor comprises a semiconductor layer, a gate electrode, a source electrode, and a drain electrode, and wherein the near-infrared light receiver further comprises a transparent electrode, and a reflective electrode.
14 . The display apparatus of claim 13 , wherein the near-infrared reflected from an object outside the cover glass is incident on the light absorption layer of the near-infrared light receiver, and a change in current of the light absorption layer is detected.
15 . The display apparatus of claim 13 , wherein the capping layer extends to a top surface of the near-infrared light receiver, wherein a part of the near-infrared is reflected from the light absorption layer, and the part of the near-infrared reflected from the light absorption layer is reflected from a bottom surface of the capping layer, so that the constructive interference occurs.