Semiconductor device and method for manufacturing semiconductor device
According to one embodiment, a method for manufacturing a semiconductor device is disclosed. The method can include preparing a structure body, the structure body including a silicon carbide member and a first film stacked with the silicon carbide member. The first film includes silicon and oxygen. The method can include performing a first treatment of heat-treating the structure body in a first atmosphere including hydrogen. The method can include, after the first treatment, performing a second treatment of heat-treating the structure body in a second atmosphere including nitrogen and oxygen. An oxygen concentration in the second atmosphere is not less than 5 ppm and not more than 1000 ppm.
1 . A semiconductor device, comprising:
a silicon carbide member; and
a first film stacked with the silicon carbide member, the first film including silicon and oxygen,
a Si—N concentration of a bond of silicon and nitrogen at a first position in a first direction from the silicon carbide member to the first film being a first peak value,
a C—N concentration of a bond of carbon and nitrogen at a second position in the first direction being a second peak value,
at a third position in the first direction, the C—N concentration being 1/2800 of the second peak value, and
the Si—N concentration at the third position being less than 1/20 of the first peak value.
2 . A semiconductor device, comprising:
a silicon carbide member; and
a first film stacked with the silicon carbide member, the first film including silicon and oxygen,
a Si—N concentration of a bond of silicon and nitrogen at a first position in a first direction from the silicon carbide member to the first film being a first peak value,
the first peak value being 1.7×10 21 /cm 3 or more,
a C—N concentration of a bond of carbon and nitrogen at a second position in the first direction being a second peak value,
a C—N concentration at a third position in the first direction being 1/2800 of the second peak value, and
a Si—N concentration at the third position being 1.0×10 20 /cm 3 or less.
3 . A semiconductor device, comprising:
a silicon carbide member; and
a first film stacked with the silicon carbide member, the first film including silicon and oxygen,
a Si—N concentration of a bond of silicon and nitrogen at a first position in a first direction from the silicon carbide member to the first film being a first peak value,
at a fourth position in the first direction, a concentration of silicon being a minimum value in the first film, and
a Si—N concentration at the fourth position being less than 1/20 of the first peak value.
4 . A semiconductor device, comprising:
a silicon carbide member; and
a first film stacked with the silicon carbide member, the first film including silicon and oxygen,
a Si—N concentration of a bond of silicon and nitrogen at a first position in a first direction from the silicon carbide member to the first film being a first peak value,
the first peak value being 1.7×10 21 /cm 3 or more,
at a fourth position in the first direction, a silicon concentration being a minimum value in the first film, and
a Si—N concentration at the fourth position being 1.0×10 20 /cm 3 or less.
5 . A semiconductor device, comprising:
a silicon carbide member; and
a first film stacked with the silicon carbide member, the first film including silicon and oxygen,
a Si—N concentration of a bond of silicon and nitrogen at a first position in a first direction from the silicon carbide member to the first film being a first peak value,
at a fifth position in the first direction, an oxygen concentration being a minimum value in the first film, and
a Si—N concentration at the fifth position being less than 1/20 of the first peak value.
6 . A semiconductor device, comprising:
a silicon carbide member; and
a first film stacked with the silicon carbide member, the first film including silicon and oxygen,
a Si—N concentration of a bond of silicon and nitrogen at a first position in a first direction from the silicon carbide member to the first film being a first peak value,
the first peak value being 1.7×10 21 /cm 3 ,
at a fifth position in the first direction, an oxygen concentration being a minimum value in the first film, and
a Si—N concentration at the fifth position being 1.0×10 20 /cm 3 or less.
7 . A semiconductor device, comprising:
a silicon carbide member; and
a first film stacked with the silicon carbide member, the first film including silicon and oxygen,
a Si—N concentration of a bond of silicon and nitrogen at a first position in a first direction from the silicon carbide member to the first film being a first peak value,
a Si—N concentration at a sixth position in the first direction being less than 1/20 of the first peak value,
the sixth position being in the first film, and
a distance between the first position and the sixth position in the first direction being 10 nm.
8 . A semiconductor device, comprising:
a silicon carbide member; and
a first film stacked with the silicon carbide member, the first film including silicon and oxygen,
a Si—N concentration of a bond of silicon and nitrogen at a first position in a first direction from the silicon carbide member to the first film being a first peak value,
the first peak value is 1.7×10 21 /cm 3 ,
a Si—N concentration at a sixth position in the first direction being 1.0×10 20 /cm 3 or less,
the sixth position being in the first film, and
a distance between the first position and the sixth position in the first direction being 10 nm.
9 . The device according to claim 1 , further comprising a first conductive film, and
the first film being provided between the silicon carbide member and the first conductive film.