Granted Patent B2

US 12,507,413 · App. 18/343,176 · Granted Dec 23, 2025

Inventors: Katsuaki Natori (Mie, JP); Hiroshi Toyoda (Mie, JP); Masayuki Kitamura (Mie, JP); Takayuki Beppu (Mie, JP); Koji Yamakawa (Mie, JP); Kenichiro Toratani (Mie, JP)

Assignee: KIOXIA CORPORATION

H10B43/27C23C16/06C23C16/56H01L21/28

Abstract

Claims (16)

1 . A method for manufacturing a semiconductor device, comprising:

placing a substrate into a chamber;

forming, on the substrate, a conductive film containing molybdenum and a metal element by a chemical vapor deposition (CVD) method, the metal element having a melting point lower than the melting point of molybdenum, and the metal element forming a complete solid solution with molybdenum, wherein the metal element is at least one selected from the group consisting of vanadium and niobium;

wherein the formation of the conductive film includes:

supplying a first solid raw material in a solid state, the first raw material containing molybdenum;

supplying a second solid raw material in a solid state, the second raw material containing the metal element;

generating a raw material gas by gasifying the first solid raw material and the second solid raw material;

forming the conductive film by the raw material gas;

supplying the first solid raw material and the second solid raw material in a raw material container;

generating the raw material gas by gasifying the first solid raw material and the second solid raw material in the raw material container

wherein the raw material container includes a first container and a second container different from the first container, the first container containing the first solid raw material and the second container containing the second solid raw material, and the formation of the conductive film further includes:

adjusting a partial pressure ratio of a gas generated from the first solid raw material and a gas generated from the second solid raw material, wherein the partial pressure ratio of the gas generated from the first solid raw material and the gas generated from the second solid raw material is adjusted to be 10 to 100.

2 . The method for manufacturing the semiconductor device according to claim 1 , comprising:

forming a stacked body having a plurality of the conductive films alternately stacked with insulating films; and

forming a columnar part in a hole in the stacked body along a stacked direction of the stacked body, the columnar part having a semiconductor film and an electric charge storage film disposed between the semiconductor film and the plurality of the conductive films.

3 . The method for manufacturing the semiconductor device according to claim 1 , wherein the metal element is vanadium.

Priority Claims (1)

Continuity (2)

References Cited (14)