Granted Patent B1

US 12,554,152 · App. 18/188,890 · Granted Feb 17, 2026

Inventors: Hamed Pishvaibazargani (Stittsville, CA); Jie Lin (Cupertino, CA); Masaki Kato (Palo Alto, CA)

Assignee: MARVELL ASIA PTE LTD

G02F1/0153G02F1/025

Abstract

Claims (30)

1 . An optical modulator comprising:

a slab of silicon comprising a first intrinsic portion and a doped portion disposed on either side of the first intrinsic portion;

a first layer of silicon disposed on the slab, wherein the first layer of silicon comprises a second intrinsic portion and a doped portion disposed on either side of the second intrinsic portion, the second intrinsic portion at least partially overlaying the first intrinsic portion, the doped portions on either side of the second intrinsic portion at least partially overlaying the first intrinsic portion and the doped portions disposed on either side of the first intrinsic portion, respectively; and

a second layer comprising a mixture of germanium and silicon, the second layer at least partially disposed on the first layer, the second layer comprising an intrinsic portion of the mixture and further comprising first and second doped portions disposed on opposite sides of the intrinsic portion of the second layer, the intrinsic portion of the second layer and the first and second doped portions forming an active region of the optical modulator, the intrinsic portion of the second layer at least partially overlaying the second intrinsic portion of the first layer, the first and second doped portions of the second layer at least partially overlaying the second intrinsic portion of the first layer and the doped portions on either side of the second intrinsic portion of the first layer, respectively;

wherein the second intrinsic portion of the first layer comprises a well; and

wherein only the intrinsic portion of the second layer extends into the well.

2 . The optical modulator of claim 1 wherein:

the active region is configured to absorb light of first and second wavelengths at first and second absorption levels, respectively, the first wavelengths being less than the second wavelengths, the first absorption level being greater than the second absorption level; and

the intrinsic portion is configured to change a refractive index of the active region to cause a 180-degree phase shift in light at the second wavelengths.

3 . The optical modulator of claim 1 wherein the mixture comprises germanium and silicon in a proportion (1−x) to x, where x is a real number greater than 0 and less than 0.1.

4 . The optical modulator of claim 3 wherein:

the active region is configured to absorb light of first and second wavelengths at first and second absorption levels, respectively, the first wavelengths being less than the second wavelengths, the first absorption level being greater than the second absorption level; and

the intrinsic portion is configured to change a refractive index of the active region at the second wavelengths proportionally to an amount of silicon in the mixture.

5 . The optical modulator of claim 3 wherein:

the active region is configured to absorb light of first and second wavelengths at first and second absorption levels, respectively, the first wavelengths being less than the second wavelengths, the first absorption level being greater than the second absorption level;

an amount of strain between germanium and silicon in the mixture is proportional to an amount of silicon in the mixture; and

the intrinsic portion is configured to change a refractive index of the active region at the second wavelengths proportionally to the amount of strain between germanium and silicon in the mixture.

6 . The optical modulator of claim 1 wherein the first layer comprises a well and wherein the intrinsic portion of the second layer extends into the well.

7 . The optical modulator of claim 6 wherein the well is configured to enhance an amount of electric field coupled to the active region of the optical modulator in response to a bias applied to the optical modulator.

8 . The optical modulator of claim 1 wherein:

the doped portions disposed on either side of the first intrinsic portion of the slab of silicon are doped with dopants of first and second types, respectively;

the doped portions on either side of the second intrinsic portion of the first layer are doped with the dopants of the first and second types, respectively; and

the first and second doped portions of the second layer are doped with the dopants of the first and second types, respectively.

9 . The optical modulator of claim 1 wherein the well is configured to enhance an amount of electric field coupled to the active region of the optical modulator in response to a bias applied to the optical modulator.

10 . The optical modulator of claim 1 further comprising:

first and second electrodes coupled to first and second ends of the slab, respectively, with the first electrode being grounded and the second electrode being connected to ground via a termination resistor; and

a DC bias coupled to the first and second electrodes to reverse bias the active region of the optical modulator.

11 . The optical modulator of claim 10 wherein the first electrode is configured to receive an RF signal comprising data to be modulated by the optical modulator with an optical carrier wave coupled to the active region through the first layer.

12 . The optical modulator of claim 10 wherein the first and second electrodes comprise traveling wave electrodes disposed proximate to the active region of the optical modulator.

13 . The optical modulator of claim 1 further comprising a plurality of doped portions disposed on either side of the doped portion disposed on either side of the first intrinsic portion wherein at least one of widths and doping levels of the plurality of doped portions increase as the distances between the plurality of doped portions from the first intrinsic portion increase.

Assignments (4)

Continuity (1)

References Cited (13)