Electroab sorption optical modulator

1. An electro-absorption optical modulator comprising:

a substrate;

a first silicon layer doped to exhibit a first type of conductivity and a second silicon layer doped to exhibit a second type of conductivity that are disposed parallel to the substrate;

a Ge 1−x Si x (0<x<1)/Si stack in which a Ge 1−x Si x layer and a Si layer are stacked on the first and second silicon layers in this order; and

a GeSi mixed crystal layer formed at an interface of the Ge 1−x Si x /Si stack,

wherein the Ge 1−x Si x /Si stack is formed into a PIN junction structure, and

a thickness and composition of the GeSi mixed crystal layer is configured by a deposition condition of the Ge 1−x Si x /Si stack or a post-deposition heat treatment, so as to control an operating wavelength of the modulator.

2. The electro-absorption optical modulator according to claim 1 , wherein a third Si layer composed of an intrinsic semiconductor is interposed between the first and second silicon layers.

3. The electro-absorption optical modulator according to claim 1 , wherein the Ge 1−x Si x /Si stack is embedded so that at least part of the Ge 1−x Si x /Si stack is sandwiched between the first and second silicon layers.

4. The electro-absorption optical modulator according to claim 1 , wherein a layer for giving lattice distortion to the Ge 1−x Si x /Si stack is stacked on the Ge 1−x Si x /Si stack.

5. The electro-absorption optical modulator according to claim 4 , wherein the layer for giving lattice distortion to the Ge 1−x Si x /Si stack is a layer that applies distortion in a <110> direction of the Ge 1−x Si x /Si stack.

6. The electro-absorption optical modulator according to claim 1 , wherein

the Ge 1−x Si x /Si stack is electrically connected via electrode layers doped to exhibit to first and second types of conductivity to the first and second silicon layers that exhibit same conductivity types, respectively.

7. The electro-absorption optical modulator according to claim 1 , wherein

the Ge concentration of the Ge 1−x Si x layer in the Ge 1−x Si x /Si stack is 80 atomic % or more.

8. An electro-optic modulation apparatus comprising:

at least two units of the electro-absorption optical modulator according to claim 1 optically connected via a Si-based optical waveguide, an input port and an output port; and

at least one pair of the electro-absorption optical modulators is driven by a differential drive circuit.

9. The electro-optic modulation apparatus according to claim 8 , wherein

the differential drive circuit performs waveform shaping on output waveforms by independently controlling DC bias voltages of the electro-absorption optical modulators to be paired.

10. The electro-optic modulation apparatus according to claim 8 , wherein

the widths of the Ge 1−x Si x /Si stacks of the respective electro-absorption optical modulators to be paired are set to different widths.

11. An optical integrated circuit comprising:

the electro-absorption optical modulator according to claim 1 ,

wherein a plurality of optical modulation regions including the Ge 1−x Si x /Si stack is provided on one substrate, and

wherein the plurality of optical modulation regions is adjusted by a pattern width of the Ge 1−x Si x /Si stack to function as an optical modulator and a light receiver.

12. An optical integrated circuit comprising:

the electro-optic modulation apparatus according to claim 8 ,

wherein a plurality of optical modulation regions including the Ge 1−x Si x /Si stack is provided on one substrate, and

wherein the plurality of optical modulation regions is adjusted by a pattern width of the Ge 1−x Si x /Si stack to function as an optical modulator and a light receiver.

13. The electro-absorption optical modulator according to claim 1 , wherein

the GeSi mixed crystal layer has a gradient composition.

14. The electro-absorption optical modulator according to claim 1 , wherein

a concentration of Ge in the GeSi mixed crystal layer is a gradient towards the Si layer.