Electronic device
An electronic device may include: a base layer; and a display element layer including a pixel defining film having an opening defined therein, and a light emitting element and a light receiving element which are divided by the pixel defining film, wherein the light emitting element and the light receiving element each include: a first electrode, a hole transport region on the first electrode, an electron transport region including a hole blocking layer, and a second electrode. The light emitting element includes an emission layer between the hole transport region and the electron transport region, and the light receiving element includes a light receiving layer between the hole transport region and the electron transport region, and an electron extraction layer between the light receiving layer and the electron transport region and including an n-dopant material.
1 . An electronic device comprising:
a base layer; and
a display element layer on the base layer and comprising a pixel defining film having an opening defined therein, and a light emitting element and a light receiving element which are divided by the pixel defining film,
wherein the light emitting element and the light receiving element each comprise:
a first electrode;
a hole transport region on the first electrode;
an electron transport region on the hole transport region and comprising a hole blocking layer comprising a triazine-based compound, and a sub electron transport region on the hole blocking layer; and
a second electrode on the electron transport region,
wherein the light emitting element comprises an emission layer between the hole transport region and the electron transport region, and
wherein the light receiving element comprises:
a light receiving layer between the hole transport region and the electron transport region, the light receiving layer being to convert incident light into electrical signals; and
an electron extraction layer between the light receiving layer and the electron transport region and comprising an n-dopant material.
2 . The electronic device of claim 1 , wherein the n-dopant material comprises a metal having a work function of 3.0 eV or less.
3 . The electronic device of claim 2 , wherein the n-dopant material comprises lithium (Li), ytterbium (Yb), magnesium (Mg), silver (Ag), calcium (Ca), or sodium (Na).
4 . The electronic device of claim 2 , wherein the electron extraction layer further comprises an organic compound, and
the organic compound is to form a chelate with the metal having a work function of 3.0 eV or less.
5 . The electronic device of claim 4 , wherein the organic compound is represented by any one selected from among compounds of Compound Group 2 and compounds of Compound Group 3:
6 . The electronic device of claim 4 , wherein the n-dopant material has a doping concentration of about 0.5 vol % to about 10 vol % with respect to the organic compound.
7 . The electronic device of claim 1 , wherein the light receiving layer comprises a donor compound and an acceptor compound, and
the acceptor compound comprises a fullerene derivative, a perylene tetracarboxylic diimide (PTCDI) derivative, a perylene tetracarboxylic dianhydride (PTCDA) derivative, a 1,4,5,8-naphthalenetetracarboxylic dianhydride (NTCDA) derivative, or a naphthalenetetracarboxylic diimide (NTCDI) derivative.
8 . The electronic device of claim 7 , wherein the electron extraction layer further comprises the acceptor compound.
9 . The electronic device of claim 7 , wherein the electron extraction layer comprises:
a first sub electron extraction layer comprising the acceptor compound; and
a second sub electron extraction layer not comprising the acceptor compound.
10 . The electronic device of claim 7 , wherein the donor compound comprises a phthalocyanine-based compound, or a perylene-based compound.
11 . The electronic device of claim 7 , wherein the light receiving layer comprises:
a first sub light receiving layer comprising the donor compound and not comprising the acceptor compound; and
a second sub light receiving layer on the first sub light receiving layer, not comprising the donor compound, and comprising the acceptor compound.
12 . The electronic device of claim 7 , wherein the light receiving layer comprises:
a first sub light receiving layer comprising the donor compound and not comprising the acceptor compound; and
a second sub light receiving layer on the first sub light receiving layer and comprising the donor compound and the acceptor compound.
13 . The electronic device of claim 1 , wherein the electron extraction layer has a thickness of about 10 Å to about 100 Å.
14 . The electronic device of claim 1 , wherein the hole blocking layer is provided as a single layer in the light emitting element and the light receiving element.
15 . The electronic device of claim 1 , wherein the hole blocking layer does not comprise the n-dopant material.
16 . The electronic device of claim 1 , wherein the triazine-based compound is represented by any one selected from among ET-31 to ET-37:
17 . An electronic device comprising a display module divided into a red light emitting region, a green light emitting region, a blue light emitting region, and a light receiving region, which are apart in a plan view,
wherein the display module comprises:
a base layer;
a display element layer on the base layer and comprising a light emitting element and a light receiving element; and
an input sensing layer on the display element layer,
the display element layer comprising:
a first electrode;
a hole transport region on the first electrode;
an electron transport region on the hole transport region and comprising a hole blocking layer comprising a triazine-based compound, and a sub electron transport region on the hole blocking layer; and
a second electrode on the electron transport region,
the light emitting element comprising an emission layer between the hole transport region and the electron transport region, and
the light receiving element comprising a light receiving layer between the hole transport region and the electron transport region, and an electron extraction layer between the light receiving layer and the electron transport region and non-overlapping the emission layer.
18 . The electronic device of claim 17 , wherein the electron extraction layer comprises an n-dopant material, and
the hole blocking layer does not comprise the n-dopant material.
19 . The electronic device of claim 17 , wherein the electron extraction layer comprises a metal having a work function of 3.0 eV or less, or a metal having a work function of 3.0 eV or less and an organic compound being to form a chelate with the metal.
20 . The electronic device of claim 19 , wherein the organic compound is represented by any one selected from among compounds of Compound Group 2 and compounds of Compound Group 3:
21 . The electronic device of claim 20 , wherein the light receiving layer comprises a donor compound and an acceptor compound, and
the acceptor compound comprises a fullerene derivative, a perylene tetracarboxylic diimide (PTCDI) derivative, a perylene tetracarboxylic dianhydride (PTCDA) derivative, a 1,4,5,8-naphthalenetetracarboxylic dianhydride (NTCDA) derivative, or a naphthalenetetracarboxylic diimide (NTCDI) derivative.
22 . The electronic device of claim 21 , wherein the electron extraction layer further comprises the acceptor compound.
23 . The electronic device of claim 17 , wherein the light emitting element comprises a red light emitting element corresponding to the red light emitting region, a blue light emitting element corresponding to the blue light emitting region, and a green light emitting element corresponding to the green light emitting region.
24 . The electronic device of claim 17 , wherein the hole transport region of the light receiving element comprises the same material as the hole transport region of the light emitting element.
25 . The electronic device of claim 17 , wherein the electron transport region of the light receiving element comprises the same material as the electron transport region of the light emitting element.
26 . The electronic device of claim 17 , wherein the triazine-based compound is represented by any one selected from among ET-31 to ET-37: