IP Library Granted Patent US 12,563,885
Granted Patent B2
US 12,563,885 · App. 18/589,868 · Granted Feb 24, 2026

Light-emitting element, display device, electronic device, and lighting device

Inventors: Satoshi Seo (Kanagawa, JP); Takeyoshi Watabe (Kanagawa, JP); Satomi Mitsumori (Kanagawa, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H10K50/11C07D241/38C07D403/12C07D405/10C09K11/02C09K11/06H10K85/342H10K85/633H10K85/636H10K85/6572H10K85/6574C09K2211/1007C09K2211/1011C09K2211/1014C09K2211/1022C09K2211/1029C09K2211/1033C09K2211/1044C09K2211/1048C09K2211/1051C09K2211/1059C09K2211/1088C09K2211/1092C09K2211/185C09K2211/188H10K50/131H10K59/35H10K85/615H10K2101/10H10K2101/27H10K2101/30H10K2101/40H10K2101/90Y02P20/582
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,563,885
App. No.
18/589,868
Granted
Feb 24, 2026
Kind
B2
Abstract

To provide a light-emitting element with high emission efficiency and low driving voltage. The light-emitting element includes a guest material and a host material. A LUMO level of the guest material is lower than a LUMO level of the host material. An energy difference between the LUMO level and a HOMO level of the guest material is larger than an energy difference between the LUMO level and a HOMO level of the host material. The guest material has a function of converting triplet excitation energy into light emission. An energy difference between the LUMO level of the guest material and the HOMO level of the host material is larger than or equal to energy of light emission of the guest material.

Claims (65)

1 . A light-emitting element comprising:

a guest material; and

a host material,

wherein the host material comprises any of a pyrimidine skeleton, a pyridazine skeleton, and a triazine skeleton,

wherein a LUMO level of the guest material is lower than a LUMO level of the host material,

wherein an energy difference between the LUMO level of the guest material and a HOMO level of the guest material is larger than an energy difference between the LUMO level of the host material and a HOMO level of the host material,

wherein the guest material is configured to convert triplet excitation energy into light emission, and

wherein the energy difference between the LUMO level of the guest material and the HOMO level of the guest material is larger than transition energy calculated from an absorption edge of an absorption spectrum of the guest material by 0.4 eV or more.

2 . The light-emitting element according to claim 1 ,

wherein the energy difference between the LUMO level of the guest material and the HOMO level of the guest material is larger than light emission energy of the guest material by 0.4 eV or more.

3 . The light-emitting element according to claim 1 ,

wherein the host material has a difference between a singlet excitation energy level and a triplet excitation energy level of larger than 0 eV and smaller than or equal to 0.2 eV.

4 . The light-emitting element according to claim 1 ,

wherein the host material is configured to exhibit thermally activated delayed fluorescence at room temperature.

5 . The light-emitting element according to claim 1 ,

wherein the host material is configured to supply excitation energy to the guest material.

6 . The light-emitting element according to claim 1 ,

wherein a light emission spectrum of the host material comprises a wavelength region overlapping with an absorption band on the lowest energy side in the absorption spectrum of the guest material.

7 . The light-emitting element according to claim 1 ,

wherein the host material is configured to transport an electron, and

wherein the host material is configured to transport a hole.

8 . A light-emitting element comprising:

a guest material; and

a host material,

wherein the host material comprises any of a pyrimidine skeleton, a pyridazine skeleton, and a triazine skeleton,

wherein a LUMO level of the guest material is lower than a LUMO level of the host material,

wherein an energy difference between the LUMO level of the guest material and a HOMO level of the guest material is larger than an energy difference between the LUMO level of the host material and a HOMO level of the host material,

wherein the guest material is configured to convert triplet excitation energy into light emission,

wherein an energy difference between the LUMO level of the guest material and the HOMO level of the host material is larger than or equal to transition energy calculated from an absorption edge of an absorption spectrum of the guest material, and

wherein the energy difference between the LUMO level of the guest material and the HOMO level of the guest material is larger than the transition energy calculated from the absorption edge of the absorption spectrum of the guest material by 0.4 eV or more.

9 . The light-emitting element according to claim 8 ,

wherein the energy difference between the LUMO level of the guest material and the HOMO level of the guest material is larger than light emission energy of the guest material by 0.4 eV or more.

10 . The light-emitting element according to claim 8 ,

wherein the host material has a difference between a singlet excitation energy level and a triplet excitation energy level of larger than 0 eV and smaller than or equal to 0.2 eV.

11 . The light-emitting element according to claim 8 ,

wherein the host material is configured to exhibit thermally activated delayed fluorescence at room temperature.

12 . The light-emitting element according to claim 8 ,

wherein the host material is configured to supply excitation energy to the guest material.

13 . The light-emitting element according to claim 8 ,

wherein a light emission spectrum of the host material comprises a wavelength region overlapping with an absorption band on the lowest energy side in the absorption spectrum of the guest material.

14 . The light-emitting element according to claim 8 ,

wherein the host material is configured to transport an electron, and

wherein the host material is configured to transport a hole.

15 . A light-emitting element comprising:

a guest material; and

a host material,

wherein the host material comprises any of a pyrimidine skeleton, a pyridazine skeleton, and a triazine skeleton,

wherein a LUMO level of the guest material is lower than a LUMO level of the host material,

wherein an energy difference between the LUMO level of the guest material and a HOMO level of the guest material is larger than an energy difference between the LUMO level of the host material and a HOMO level of the host material,

wherein the guest material is configured to convert triplet excitation energy into light emission,

wherein an energy difference between the LUMO level of the guest material and the HOMO level of the host material is larger than or equal to light emission energy of the guest material,

wherein the energy difference between the LUMO level of the guest material and the HOMO level of the guest material is larger than transition energy calculated from an absorption edge of an absorption spectrum of the guest material by 0.4 eV or more.

16 . The light-emitting element according to claim 15 ,

wherein the energy difference between the LUMO level of the guest material and the HOMO level of the guest material is larger than light emission energy of the guest material by 0.4 eV or more.

17 . The light-emitting element according to claim 15 ,

wherein the host material has a difference between a singlet excitation energy level and a triplet excitation energy level of larger than 0 eV and smaller than or equal to 0.2 eV.

18 . The light-emitting element according to claim 15 ,

wherein the host material is configured to exhibit thermally activated delayed fluorescence at room temperature.

19 . The light-emitting element according to claim 15 ,

wherein the host material is configured to supply excitation energy to the guest material.

20 . The light-emitting element according to claim 15 ,

wherein a light emission spectrum of the host material comprises a wavelength region overlapping with an absorption band on the lowest energy side in the absorption spectrum of the guest material.

21 . The light-emitting element according to claim 15 ,

wherein the host material is configured to transport an electron, and

wherein the host material is configured to transport a hole.

Priority Claims (1)
JP 2015-194796 · Sep 30, 2015 · national
Continuity (3)
Continuation 17127045 · Dec 18, 2020
Continuation 15278750 · Sep 28, 2016
Related Publication 20240206209A1 · Jun 20, 2024
References Cited (122)
US 7175922B2 · Jarikov et al. · 2007 [cited by applicant]
US 7183010B2 · Jarikov · 2007 [cited by applicant]
US 7332857B2 · Seo et al. · 2008 [cited by applicant]
US 7597967B2 · Kondakova et al. · 2009 [cited by applicant]
US 7683536B2 · Forrest et al. · 2010 [cited by applicant]
US 7906226B2 · Matsuura et al. · 2011 [cited by applicant]
US 7993760B2 · Komori et al. · 2011 [cited by applicant]
US 8034465B2 · Liao et al. · 2011 [cited by applicant]
US 8105701B2 · Matsuura et al. · 2012 [cited by applicant]
US 8274214B2 · Ikeda et al. · 2012 [cited by applicant]
US 8470455B2 · Matsuura et al. · 2013 [cited by applicant]
US 8652654B2 · Inoue et al. · 2014 [cited by applicant]
US 8853680B2 · Yamazaki et al. · 2014 [cited by applicant]
US 8865323B2 · Inoue et al. · 2014 [cited by applicant]
US 8877352B2 · Inoue et al. · 2014 [cited by applicant]
US 8940414B2 · Inoue et al. · 2015 [cited by applicant]
US 8963127B2 · Pieh et al. · 2015 [cited by applicant]
US 8981355B2 · Seo · 2015 [cited by applicant]
US 8993129B2 · Endo et al. · 2015 [cited by applicant]
US 8994263B2 · Shitagaki et al. · 2015 [cited by applicant]
US 9054317B2 · Monkman et al. · 2015 [cited by applicant]
US 9159942B2 · Seo et al. · 2015 [cited by applicant]
US 9175213B2 · Seo et al. · 2015 [cited by applicant]
US 9178158B2 · Kitano et al. · 2015 [cited by applicant]
US 9269912B2 · Graetzel et al. · 2016 [cited by applicant]
US 9356250B2 · Ohsawa et al. · 2016 [cited by applicant]
US 9368741B2 · Ishisone et al. · 2016 [cited by applicant]
US 9604928B2 · Shitagaki et al. · 2017 [cited by applicant]
US 9653697B2 · Ishisone et al. · 2017 [cited by applicant]
US 10193077B2 · Inoue et al. · 2019 [cited by applicant]
US 10454054B2 · Ishisone et al. · 2019 [cited by applicant]
US 10693094B2 · Seo · 2020 [cited by examiner]
US 11925041B2 · Seo · 2024 [cited by examiner]
US 20030175553A1 · Thompson et al. · 2003 [cited by applicant]
US 20050048310A1 · Cocchi et al. · 2005 [cited by applicant]
US 20050221116A1 · Cocchi et al. · 2005 [cited by applicant]
US 20060134464A1 · Nariyuki · 2006 [cited by applicant]
US 20060251921A1 · Forrest et al. · 2006 [cited by applicant]
US 20070090756A1 · Okada et al. · 2007 [cited by applicant]
US 20080149923A1 · Ohsawa et al. · 2008 [cited by applicant]
US 20110279020A1 · Inoue et al. · 2011 [cited by applicant]
US 20120205632A1 · Shitagaki et al. · 2012 [cited by applicant]
US 20120217487A1 · Yamazaki et al. · 2012 [cited by applicant]
US 20120235131A1 · Okamoto · 2012 [cited by applicant]
US 20130134395A1 · Kitano et al. · 2013 [cited by applicant]
US 20140001457A1 · Endo · 2014 [cited by applicant]
US 20140005397A1 · Graetzel et al. · 2014 [cited by applicant]
US 20140217378A1 · Nishimura et al. · 2014 [cited by applicant]
US 20140340888A1 · Ishisone et al. · 2014 [cited by applicant]
US 20150069352A1 · Kim et al. · 2015 [cited by applicant]
US 20150188072A1 · Seo · 2015 [cited by applicant]
US 20150228912A1 · Inoue et al. · 2015 [cited by applicant]
US 20160049607A1 · Seo et al. · 2016 [cited by applicant]
US 20170012207A1 · Seo et al. · 2017 [cited by applicant]
US 20170025615A1 · Seo et al. · 2017 [cited by applicant]
US 20170040553A1 · Watabe et al. · 2017 [cited by applicant]
US 20170092890A1 · Seo et al. · 2017 [cited by applicant]
CN 102421772A · 2012 [cited by applicant]
CN 102439004A · 2012 [cited by applicant]
CN 103137894A · 2013 [cited by applicant]
CN 103339137A · 2013 [cited by applicant]
CN 104167494A · 2014 [cited by applicant]
CN 104365180A · 2015 [cited by applicant]
EP 1202608A · 2002 [cited by applicant]
EP 1718122A · 2006 [cited by applicant]
EP 2415769A · 2012 [cited by applicant]
EP 2423209A · 2012 [cited by applicant]
EP 2688370A · 2014 [cited by applicant]
JP 2008288344A · 2008 [cited by applicant]
JP 2010182699A · 2010 [cited by applicant]
JP 2011199019A · 2011 [cited by applicant]
JP 2012195054A · 2012 [cited by applicant]
JP 2012212879A · 2012 [cited by applicant]
JP 2013048265A · 2013 [cited by applicant]
JP 2013545754 · 2013 [cited by applicant]
JP 2014241405A · 2014 [cited by applicant]
JP 2016225498A · 2016 [cited by applicant]
KR 20120057561A · 2012 [cited by applicant]
KR 20130058620A · 2013 [cited by applicant]
KR 20130143611A · 2013 [cited by applicant]
KR 20140135628A · 2014 [cited by applicant]
KR 20150016507A · 2015 [cited by applicant]
TW 201141989 · 2011 [cited by applicant]
TW 201235354 · 2012 [cited by applicant]
TW 201406547 · 2014 [cited by applicant]
WO WO2006105387 · 2006 [cited by applicant]
WO WO2007108327 · 2007 [cited by applicant]
WO WO2011065138 · 2011 [cited by applicant]
WO WO2011132683 · 2011 [cited by applicant]
WO WO2012069170 · 2012 [cited by applicant]
WO WO2012124642 · 2012 [cited by applicant]
WO WO2013180036 · 2013 [cited by applicant]
KR Patent No. 2015-0016507 CN Patent No. 104365180 TW Patent No. 201406547. [cited by applicant]
US Patent Application Publication No. US 2014/0001457 A1 Ep Patent No. 2 688 370 A1 WO Patent No. 2012/124642 A1. [cited by applicant]
US Patent Application Publication No. US 2006/0251921 A1 U.S. Pat. No. 7,683,536 B2 * WO Patent No. 2006/105387 A1 *. [cited by applicant]
Yersin.H et al., Highly Efficient OLEDs with Phosphorescent Materials, 2008, pp. 1-97,283-309, Wiley-VCH Verlag GmbH & Co. [cited by applicant]
Tokito.S et al., “Improvement in performance by doping”, Organic EL Display, Aug. 20, 2004, pp. 67-99, Ohmsha. [cited by applicant]
Jeon.W et al., “Ideal host and guest system in phosphorescent OLEDs”, Organic Electronics, 2009, vol. 10, pp. 240-246, Elsevier. [cited by applicant]
Su.S et al., “RGB Phosphorescent Organic Light-Emitting Diodes by Using Host Materials with Heterocyclic Cores: Effect of Nitrogen Atom Orientations”, Chem. Mater. (Chemistry of Materials), 2011, vol. 23, No. 2, pp. 274… [cited by applicant]
Rausch.A et al., “Matrix Effects on the Triplet State of the OLED Emitter Ir(4,6-dFppy)2(pic)(Flrpic): Investigations by High-Resolution Optical Spectroscopy”, Inorg. Chem. (Inorganic Chemistry), 2009, vol. 48, No. 5, p… [cited by applicant]
Gong.X et al., “Phosphorescence from iridium complexes doped into polymer blends”, J. Appl. Phys. (Journal of Applied Physics) , Feb. 1, 2004, vol. 95, No. 3, pp. 948-953. [cited by applicant]
Zhao.Q et al., “Synthesis and Photophysical, Electrochemical, and Electrophosphorescent Properties of a Series of Iridium(III) Complexes Based on Quinoline Derivatives and Different β-Diketonate Ligands”, Organometallic… [cited by applicant]
Hino.Y et al., “Red Phosphorescent Organic Light-Emitting Diodes Using Mixture System of Small-Molecule and Polymer Host”, Jpn. J. Appl. Phys. (Japanese Journal of Applied Physics) , Apr. 21, 2005, vol. 44, No. 4B, pp. … [cited by applicant]
Tsuboyama.A et al., “Homoleptic Cyclometalated Iridium Complexes with Highly Efficient Red Phosphorescence and Application to Organic Light-Emitting Diode”, J. Am. Chem. Soc. (Journal of the American Chemical Society), … [cited by applicant]
Kondakova.M et al., “High-efficiency, low-voltage phosphorescent organic light-emitting diode devices with mixed host”, J. Appl. Phys. (Journal of Applied Physics) , Nov. 4, 2008, vol. 104, pp. 094501-1-094501 17. [cited by applicant]
Chen.F et al., “Triplet Exciton Confinement in Phosphorescent Polymer Light-Emitting Diodes”, Appl. Phys. Lett. (Applied Physics Letters) , Feb. 17, 2003, vol. 82, No. 7, pp. 1006-1008. [cited by applicant]
Lee.J et al., “Stabilizing the efficiency of phosphorescent organic light-emitting diodes”, SPIE Newsroom, Apr. 21, 2008, pp. 1-3. [cited by applicant]
Tokito.S et al., “Confinement of Triplet Energy On Phosphorescent Molecules for Highly-Efficient Organic Blue-Light-Emitting Devices”, Appl. Phys. Lett. (Applied Physics Letters) , Jul. 21, 2003, vol. 83, No. 3, pp. 569… [cited by applicant]
Endo.A et al., “Efficient Up-Conversion of Triplet Excitons Into a Singlet State and Its Application for Organic Light Emitting Diodes”, Appl. Phys. Lett. (Applied Physics Letters) , Feb. 24, 2011, vol. 98, No. 8, pp. 0… [cited by applicant]
Itano.K et al., “Exciplex formation at the organic solid-state interface: Yellow emission in organic light-emitting diodes using green-fluorescent tris(8-quinolinolato)aluminum and hole-transporting molecular materials … [cited by applicant]
Park.Y et al., “Efficient triplet harvesting by fluorescent molecules through exciplexes for high efficiency organic light-emitting diodes”, Appl. Phys. Lett. (Applied Physics Letters) , Apr. 18, 2013, vol. 102, No. 15,… [cited by applicant]
Endo.A et al., “Thermally Activated Delayed Fluorescence from Sn4+-Porphyrin Complexes and Their Application to Organic Light Emitting Diodes—A Novel Mechanism for Electroluminescence”, Adv. Mater. (Advanced Materials),… [cited by applicant]
Polikarpov.E et al., “Materials Design Concepts for Efficient Blue OLEDs: A Joint Theoretical and Experimental Study”, Material Matters, Apr. 1, 2012, vol. 7, No. 1, pp. 2-8. [cited by applicant]
Kim.J et al., “Study of Sequential Dexter Energy Transfer in High Efficient Phosphorescent White Organic Light-Emitting Diodes with Single Emissive Layer”, Sci. Rep. (Scientific Reports), Nov. 12, 2014, vol. 4, No. 7009… [cited by applicant]
Chinese Office Action (Application No. 201610872789.9) Dated Oct. 26, 2020. [cited by applicant]
Seo.S et al., “Exciplex-triplet energy transfer: A new method to achieve extremely efficient organic light-emitting diode with external quantum efficiency over 30% and drive voltage below 3V”, Jpn. J. Appl. Phys. (Japan… [cited by applicant]
Nakanotani.H et al., “High-efficiency organic light-emitting diodes with fluorescent emitters”, Nature Communications, May 30, 2014, vol. 5, pp. 4016-1-4016-7. [cited by applicant]
German Office Action (Application No. 102016218696.5) Dated Nov. 6, 2023. [cited by applicant]
Frey.J et al., “Structure-property relationships based on Hammett constants in cyclometalated iridium(III) complexes: their application to the design of a fluorine-free FlrPic-like emitter”, Dalton Transactions, Dec. 2,… [cited by applicant]
D'Andrade.B et al., “Relationship Between the Ionization and Oxidation Potentials of Molecular Organic Semiconductors”, Organic Electronics, 2005, vol. 6, No. 1, pp. 11-20. [cited by applicant]
Sworakowski.J, “How accurate are energies of HOMO and LUMO levels in small-molecule organic semiconductors determined from cyclic voltammetry or optical spectroscopy?”, Synthetic Metals, Dec. 12, 2017, vol. 235, pp. 125… [cited by applicant]
Kolosov.D et al., “1,8-Naphtalimides in Phosphorescent Organic LEDs: The Interplay Between Dopant, Exciplex, and Host Emission”, J. Am. Chem. Soc. (Journal of the American Chemical Society), Aug. 21, 2002, vol. 124, No.… [cited by applicant]