Protective actions for a memory device based on detecting an attack
Methods, systems, and devices for protective actions for a memory device based on detecting an attack are described. In some systems, a memory device may detect whether a fault is injected into the memory device. The memory device may apply a delay during boot up if a fault is detected. To ensure the delay is applied, the memory device may default to applying the delay and may remove an indication to apply the delay if a fault is not detected. Additionally or alternatively, the memory device may erase information from non-volatile memory during boot up, for example, if a fault is detected. The memory device may be configured to ensure at least a specific portion of memory resources (e.g., resources configured to store sensitive information) is erased during boot up. In some examples, the memory device may store data using a stream cipher to improve security of the data.
1 . A method, comprising:
setting an indication to apply a delay of a first duration to a procedure to boot up a memory device;
performing a first procedure to power down the memory device;
detecting, while performing the first procedure, that a fault associated with the memory device has occurred, wherein the indication to apply the delay is maintained in accordance with detecting that the fault has occurred;
receive a command to perform a second procedure to boot up the memory device based at least in part on performing the first procedure to power down the memory device; and
applying, based at least in part on reception of the command and based at least in part on the indication being set, the delay of the first duration to an initiation of the second procedure to boot up the memory device.
2 . The method of claim 1 , further comprising:
writing a first bit value to a bit in non-volatile memory during the second procedure to boot up the memory device, wherein the bit with the first bit value in the non-volatile memory comprises the indication to apply the delay.
3 . The method of claim 2 , further comprising:
reading a bit value of the bit in the non-volatile memory during the second procedure to boot up the memory device, wherein the delay is applied to the second procedure to boot up the memory device based at least in part on the bit value of the bit in the non-volatile memory being the first bit value.
4 . The method of claim 1 , further comprising:
failing to detect that a second fault is associated with the memory device after completing the second procedure to boot up the memory device; and
writing a second bit value to a bit in non-volatile memory based at least in part on failing to detect that the second fault is associated with the memory device.
5 . The method of claim 4 , further comprising:
performing a third procedure to power down the memory device after writing the second bit value to the bit in the non-volatile memory;
performing a fourth procedure to boot up the memory device based at least in part on performing the third procedure to power down the memory device; and
refraining from applying the delay to the fourth procedure to boot up the memory device based at least in part on a bit value of the bit in the non-volatile memory being the second bit value.
6 . The method of claim 1 , further comprising:
charging a capacitor during the second procedure to boot up the memory device, wherein the capacitor comprises the indication to apply the delay.
7 . The method of claim 6 , wherein the delay is applied to the second procedure to boot up the memory device based at least in part on determining that the capacitor is charged during the second procedure to boot up the memory device.
8 . The method of claim 6 , further comprising:
failing to detect that a second fault is associated with the memory device after completing the second procedure to boot up the memory device; and
discharging the capacitor based at least in part on failing to detect that the second fault is associated with the memory device.
9 . The method of claim 8 , further comprising:
tuning the discharging of the capacitor based at least in part on a duration of the delay, a quantity of faults detected as associated with the memory device, or both.
10 . The method of claim 1 , further comprising:
generating signaling indicative of an alarm based at least in part on detecting that the fault is associated with the memory device, wherein the indication is maintained based at least in part on the signaling indicative of the alarm.
11 . The method of claim 1 , further comprising:
detecting that a quantity of faults associated with the memory device during a duration exceeds a threshold, wherein the indication is maintained based at least in part on the quantity of faults for the duration exceeding the threshold.
12 . The method of claim 1 , further comprising:
writing, to non-volatile memory, data indicative of a duration of the delay, wherein applying the delay is based at least in part on the duration of the delay.