IP Library Granted Patent US 12,587,764
Granted Patent B2
US 12,587,764 · App. 18/072,689 · Granted Mar 24, 2026

Flexible computational image sensor with compressive sensing capability

Inventors: Yibing Michelle Wang (Temple City, CA); Chunji Wang (Pasadena, CA); Yanhai Ren (Pasadena, CA); Tze-Ching Fung (Diamond Bar, CA); Duhyun Lee (San Jose, CA)
Assignee: SAMSUNG ELECTRONICS CO., LTD.
H04N25/713H04N25/53
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Quick Facts
Patent No.
US 12,587,764
App. No.
18/072,689
Granted
Mar 24, 2026
Kind
B2
Abstract

The present disclosure relates to a method and system for imaging a scene. The method includes generating a shutter pattern and applying the shutter pattern to a photodetector array. The system includes a sensor architecture in three dimensions, where elements of the sensor architecture are stacked in two or more layers. Some elements of the sensor architecture include a photodetector array, register array, a generator to generate shutter patterns, readout circuitry, and an ISP.

Claims (46)

1 . A sensor, comprising:

a photodetector array located on a first die layer,

a register array located on a second die layer,

a row select driver,

a column readout,

a pattern generator, and

an image signal processor,

wherein the first die layer is stacked on the second die layer; and

wherein a first register of the register array associated with a first pixel receives a part of a shutter pattern during a first clock cycle, and the first register sends the part of the shutter pattern to a second register of the register array associated with a second pixel during a second clock cycle.

2 . The sensor of claim 1 , wherein the photodetector array comprises at least one of a photodiode, SPAD, CIS, QIS, or CCD.

3 . The sensor of claim 1 , wherein the row select driver is located on the first die layer.

4 . The sensor of claim 1 , wherein the column readout is located on the first die layer.

5 . The sensor of claim 1 , wherein the pattern generator is located on the second die layer.

6 . The sensor of claim 1 , wherein the image signal processor is located on the second die layer.

7 . The sensor of claim 1 , wherein at least one register in the register array outputs one control signal to one photodetector in the photodetector array.

8 . The sensor of claim 1 , wherein at least one register in the register array outputs one control signal to two or more photodetectors in the photodetector array.

9 . The sensor of claim 1 , wherein the sensor further comprises a third layer and has at least one of a pattern generator, register array, image signal processor, or memory located on the third layer.

10 . The sensor of claim 1 , wherein the first die layer and the second die layer are electrically connected with microbumps, micropillars, solder balls or hybrid bonding.

11 . A method for imaging, comprising:

generating a shutter pattern on a die layer,

sending the shutter pattern to a register array on the die layer,

outputting control signal values from the register array to switches in a photodetector array on an another die layer,

enabling charge accumulation in photodetectors in the photodetector array when the control signal values are set to enable,

disabling charge accumulation in photodetectors in the photodetector array when the control signal value are set to disable, and

reading out the accumulated charge values on the die layer;

wherein sending the shutter pattern to the register array on the die layer further comprises:

receiving a part of the shutter pattern in a first register associated with a first pixel during a first clock cycle, and

sending the part of the shutter pattern from the first register to a second register associated with a second pixel during a second clock cycle.

12 . The method of claim 11 , wherein the enabled charge accumulation is stored in a first memory on the die layer.

13 . The method of claim 11 , wherein the reading out of the accumulated charge values on the-die layer further comprises selecting at least one row of a photodetector array and sending the values of the selected at least one row to a column readout on the another die layer.

14 . The method of claim 11 , wherein the speed of the clock cycle may be the product of a compression ratio and a frame rate.

15 . A sensor, comprising:

a photodetector array on a first die layer,

a register array on a second die layer,

a memory array,

an image signal processor,

a row driver,

a pattern generator, and

a column readout,

wherein the first die layer and second die layer are vertically stacked; and

wherein a first register of the register array associated with a first pixel receives a part of a shutter pattern during a first clock cycle, and the first register sends the part of the shutter pattern to a second register of the register array associated with a second pixel during a second clock cycle.

16 . The sensor of claim 15 , wherein the memory array is on the second die layer or a third die layer.

17 . The sensor of claim 15 , wherein the image signal processor is on the second die layer, third die layer, or a fourth die layer.

18 . The sensor of claim 15 , wherein the pattern generator is on the second die layer or third die layer.

19 . The sensor of claim 15 , wherein the sensor further comprises a memory array and a latch array that are on the second die layer, third die layer, or fourth die layer.

20 . The sensor of claim 15 , wherein the first die layer and the second die layer are electrically connected with microbumps, micropillars, solder balls or hybrid bonding.

Continuity (2)
Provisional Application 63295839 · Dec 31, 2021
Related Publication 20230217128A1 · Jul 6, 2023
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