Formation of monolithic nanostructures on prosthetic devices
A method for formation of monolithic nanostructures on an implantable device includes: a. depositing a metal film to a surface of the implantable device; b. heating the metal film for a period of time, such that the metal film transforms into multiple discrete nanoparticles, the multiple nanoparticles thereby forming an etch mask on the surface of the implantable device; c. etching the implantable device such that the surface of the implantable device is etched through the etch mask, thereby forming monolithic nanostructures in the surface of the implantable device; and d. (optionally) removing the etch mask, such as by immersion in an aqua regia solution.
1 . A method for formation of monolithic nanostructures on an implantable device, the monolithic nanostructures being configured for osseointegration and prevention of bacterial growth of the implantable device, the method comprising:
a. depositing a metal film to a surface of the implantable device;
b. heating the metal film for a period of time, such that the metal film transforms into multiple discrete nanoparticles, the multiple nanoparticles thereby forming an etch mask on said surface of the implantable device; and
c. etching the implantable device such that said surface of the implantable device is etched through the etch mask, wherein the surface of the implantable device is etched simultaneously as the etch mask is etched, thereby forming monolithic nanostructures on the surface of the implantable device.
2 . The method for formation of monolithic nanostructures according to claim 1 , wherein, in the etching step, the surface of the implantable device is etched simultaneously as the nanoparticles of the etch mask are etched.
3 . The method for formation of monolithic nanostructures according to claim 1 , wherein the implantable device is etched at an etch rate of between 0.01-1 times the etch rate of the etch mask.
4 . The method for formation of monolithic nanostructures according to claim 1 , wherein the metal film is heated for at least 1 minute to a temperature between 70° C. and 900° C.
5 . The method for formation of monolithic nanostructures according to claim 1 , wherein the average diameter of the nanoparticles is between 10 nm and 350 nm.
6 . The method for formation of monolithic nanostructures according to claim 1 , wherein etching is performed by wet etching.
7 . The method for formation of monolithic nanostructures according to claim 1 , wherein etching is performed by dry etching.
8 . The method for formation of monolithic nanostructures according to claim 1 , wherein the density of the nanostructures is between 1 μm −2 and 2000 μm −2 .
9 . The method for formation of monolithic nanostructures according to claim 1 , wherein the average height of the nanostructures is between 10 nm and 500 nm.
10 . The method for formation of monolithic nanostructures according to claim 1 , wherein the nanostructures have an average spacing of between 10 nm and 300 nm.
11 . The method for formation of monolithic nanostructures according to claim 1 , wherein the nanostructures have a tip width of below 0.5 μm.
12 . The method for formation of monolithic nanostructures according to claim 1 , wherein the nanostructures have a sidewall angle of between 45° and 90°.
13 . The method for formation of monolithic nanostructures according to claim 1 , wherein the nanostructures are substantially cone-shaped, extending from the surface of the implantable device.
14 . The method for formation of monolithic nanostructures according to claim 1 , wherein the nanostructures are provided as a number of ridges, formed between substantially concave indentations of the surface of the implantable device.
15 . A method for formation of monolithic nanostructures on an implantable device, the method comprising:
a. depositing a metal film to a surface of the implantable device;
b. heating the metal film for a period of time, such that the metal film transforms into multiple discrete nanoparticles, the multiple nanoparticles thereby forming an etch mask on said surface of the implantable device; and
c. etching the implantable device such that said surface of the implantable device is etched through the etch mask, wherein the surface of the implantable device is etched simultaneously as the etch mask is etched, thereby forming monolithic nanostructures on the surface of the implantable device,
wherein the nanostructures are substantially cone-shaped, extending from the surface of the implantable device.