Granted Patent B2

US 12,604,397 · App. 17/785,007 · Granted Apr 14, 2026

Inventors: Ilkka Varjos (Vantaa, FI); Sari Tamminen (Vantaa, FI)

Assignee: CANATU OY

H05K1/0281H05K3/0014H05K3/1291H05K2201/2009H05K2203/1105H05K2203/1131

Abstract

Claims (21)

1 . A method for manufacturing a formed film, device comprising steps of:

providing a formable film having a first side and a second side;

forming a conductive pattern onto a first side of the formable film;

forming a deformation-preventing element on the second side of the formable film by printing a nanopowder ink onto the formable film and sintering the nanopowder, wherein the deformation-preventing element is printed on the second side of the formable film opposing the first side of the formable film; and

forming at least one section of the formable film at a forming temperature;

wherein the providing of the formable film comprises forming at least one section of the formable film at a forming temperature; and

wherein a modulus of elasticity of the deformation-preventing element at the forming temperature is greater than a modulus of elasticity of the formable film at the forming temperature to obtain the formed film device.

2 . The method according to claim 1 , wherein the forming the at least one section of the formable film at the forming temperature comprises at least one of:

thermoforming the at least one section of the formable film at the forming temperature; and

injection moulding the at least one section of the formable film at the forming temperature.

3 . The method according to claim 2 , wherein, in the the thermoforming the at least one section of the formable film at the forming temperature, the forming temperature is in the range 130-200° C.

4 . The method according to claim 1 , wherein the forming temperature is greater than a glass transition temperature of the formable film.

5 . The method according to claim 1 , wherein the nanopowder comprises a material selected from: silver, gold, silicon, tungsten, titanium oxide, copper, platinum, palladium, aluminium, aluminium oxide, iron oxide, silica, silicon carbide, silicon dioxide, boron nitride, bismuth oxide, bismuth cobalt zinc oxide, nickel, carbon, and any combinations thereof.

6 . The method according to claim 1 , wherein the formable film comprises a material selected from: polyethylene terephthalate, polycarbonate, polymethyl methacrylate, cyclic olefin copolymer, triacetate, cyclic Olefin Copolymer, poly(vinyl chloride), poly(ethylene 2,6-naphthalate), polyimide, polypropylene, polyethylene, and any combination thereof.

7 . The method according to claim 1 , wherein a thickness of the deformation-preventing element in a direction perpendicular to the formable film is less than 50 micrometres.

8 . The method according to claim 1 , wherein the deformation-preventing element is positioned to at least partially overlap the conductive pattern.

9 . The method according to claim 1 , wherein a distance between the conductive pattern and the deformation-preventing element is less than 10 millimetres.

10 . The method according to claim 1 , wherein the conductive pattern comprises at least one set of conductive traces.

11 . The method according to claim 1 , wherein the formable film further comprises an electronic component, an optical component, a flexible cable, a flexible printed circuit board, and/or an optoelectronic component attached onto the first side of the formable film and electrically coupled to the conductive pattern.

12 . The method according of claim 1 , wherein the formation preventing element is positioned to at least partially overlap the electronic component, the optical component, the flexible cable, the flexible printed circuit board and/or the optoelectronic component.

13 . The method according to claim 1 , wherein the formable film is transparent.

Priority Claims (1)

Continuity (1)

References Cited (40)