Process for manufacturing electroacoustic modules
A process for manufacturing electroacoustic modules including: forming an assembly with a redistribution structure and a plurality of dice arranged in a dielectric region; forming a wafer with a semiconductor body and a plurality of respective unit portions laterally staggered, each of which includes a respective supporting region, set in contact with the semiconductor body, and a number of actuators; reducing the thickness of the semiconductor body and then selectively removing portions of the semiconductor body so as to singulate, starting from the wafer, a plurality of transduction structures, each including a semiconductor substrate, which contacts a corresponding supporting region and is traversed by cavities delimited by portions of the supporting region that form membranes mechanically coupled to the actuators; and then coupling the transduction structures to the redistribution structure of the assembly.
1 . A method, comprising:
forming an assembly including:
forming a plurality of first unit portions laterally staggered with respect to one another by forming a dielectric coating region around a plurality of die, each respective first unit portion comprises at least one die, of the plurality of die arranged in the dielectric coating region; and
forming a redistribution structure electrically coupled to the plurality of die of the plurality of first unit portions, the dielectric coating region being on the redistribution structure;
forming a wafer including a semiconductor body, having an initial thickness, and a plurality of second unit portions laterally staggered with respect to one another, each of which comprises a supporting region, arranged in contact with the semiconductor body, and a number of actuators, which contact the supporting region;
reducing the thickness of the semiconductor body of the wafer to a final thickness;
after reducing the thickness of the semiconductor body of the wafer to the final thickness, selectively removing portions of the semiconductor body, so as to singulate, starting from the wafer, a plurality of transduction structures, each of which includes a semiconductor substrate, which contacts a corresponding one of the supporting regions and is traversed by a number of cavities delimited by corresponding portions of the corresponding one of the supporting regions and by corresponding ones of a plurality of semiconductor portions formed by selectively removing the portions of the semiconductor body, which form corresponding membranes mechanically coupled to corresponding ones of the actuators, wherein selectively removing the portions of the semiconductor body comprises removing the portions of the semiconductor body that contact corresponding portions of the supporting regions so as to form the number of cavities; and
after selectively removing the portions of the semiconductor body of the wafer forming the number of cavities, coupling the transduction structures to the redistribution structure of the assembly.
2 . The method according to claim 1 , wherein:
forming the wafer comprises forming a wafer cavity, which extends between the supporting regions and moreover extends partially into the semiconductor body; and
selectively removing the portions of the semiconductor body comprises removing first portions of the semiconductor body, which contact corresponding portions of the supporting regions, so as to form the cavities, and removing second portions of the semiconductor body, which are aligned with the wafer cavity, so as to singulate the transduction structures.
3 . The method according to claim 2 , wherein, after the reduction of thickness, the semiconductor body is delimited by a first surface and by a second surface, the supporting regions contacting the first surface.
4 . The method according to claim 3 , further comprising forming a mask on the second surface of the semiconductor body and removing the first and second portions of the semiconductor body by performing an etching through the mask.
5 . The method according to claim 2 , wherein the wafer comprises, for each second unit portion of the plurality of second unit portions, a corresponding buried dielectric region, which extends within the semiconductor body, the method further comprising:
exposing the buried dielectric regions, by said reduction of the thickness of the semiconductor body of the wafer; and
removing said first and second portions of the semiconductor body, using the buried dielectric regions as a mask.
6 . The method according to claim 2 , wherein:
forming the redistribution structure comprises forming a dielectric redistribution region, which is delimited by a respective outer surface opposite to the dielectric coating region, forming each first unit portion of the plurality of first unit portions of the assembly further includes:
forming a plurality of first pads, which are exposed from the outer surface of the dielectric redistribution region; and
forming a plurality of first conductive redistribution paths, which extend through the dielectric redistribution region and electrically couple the first pads to the at least one die; and
after the reduction of thickness, the semiconductor body is delimited by a respective inner surface and by a respective outer surface, the supporting regions contacting the inner surface.
7 . The method according to claim 1 , wherein:
forming the redistribution structure includes forming a dielectric redistribution region, which is delimited by a surface, opposite to the dielectric coating region;
forming each first unit portion of the plurality of first unit portions of the assembly further comprises:
forming a plurality of first pads, which are exposed at the surface of the dielectric redistribution region; and
forming a plurality of conductive redistribution paths, which extend through the dielectric redistribution region and electrically couple the first pads to the at least one die;
forming the wafer includes forming a plurality of second pads, arranged on the supporting regions and electrically coupled to the actuators.
8 . The method of claim 7 , wherein forming each first unit portion of the plurality of first unit portions of the assembly includes forming a plurality of first conductive contact elements, which extend from corresponding ones of the plurality of first pads, in an opposite direction with respect to the dielectric redistribution region.
9 . The method of claim 8 , wherein forming the wafer includes forming a plurality of second conductive contact elements, which extend from corresponding ones of the plurality of second pads, in an opposite direction with respect to the semiconductor body.
10 . The method of claim 9 , wherein coupling the transduction structures to the redistribution structure of the assembly comprises forming electrical contacts, which each extend between a corresponding one of the plurality of first pads and a corresponding one of the plurality of second pads, by coupling each one of the plurality of first conductive contact elements to a corresponding one of the plurality of second conductive contact elements.
11 . The method of claim 9 , further comprising:
forming in a gap, a bonding region, which laterally delimits, for each transduction structure, a corresponding closed cavity, which is moreover delimited by the corresponding supporting region and by a corresponding portion of the dielectric redistribution region; and
carrying out a dicing operation, along scribe lines that traverse the bonding region.
12 . The method of claim 8 , further comprising coupling each one of the plurality of first conductive contact elements to a corresponding one of the plurality of second pads.
13 . The method of claim 7 , further comprising:
forming a plurality of first conductive contact elements of the wafer, which extend from ones of the plurality of second pads, in an opposite direction with respect to the semiconductor body; and
coupling each one of the plurality of second pads to a corresponding one of the plurality of first pads with the plurality of first conductive elements.
14 . A method, comprising:
forming a plurality of unit portions of an assembly including:
coupling a plurality of die to a redistribution structure;
forming a coating region on the redistribution structure and enclosing the plurality of die; and
forming a connection region extending through the coating region to the redistribution structure;
forming a wafer including:
forming a multilayer structure on a surface of a semiconductor body;
forming a plurality of actuators on the multilayer structure;
forming a plurality of drive pads on the multilayer structure;
forming a plurality of connection elements on the plurality of drive pads;
forming a plurality of first recesses extending through the multilayer structure and extending into a first surface of the semiconductor body; and
forming a plurality of second recesses extending into a second surface of the semiconductor body opposite to the first surface and extending to the multilayer structure;
forming a plurality of transduction structures by singulating the wafer;
coupling the plurality of transduction structures to the assembly by coupling the plurality of connection elements of the plurality of transduction structures to the redistribution structure;
forming a bonding region between adjacent ones of the plurality of transduction structures; and
forming a plurality of die assemblies by singulating the bonding region and the assembly.
15 . The method of claim 14 , wherein coupling the transduction structures to the assembly further includes overlapping ones of the plurality of units portions with the plurality of actuators of the plurality of transduction structures.
16 . A method, comprising:
forming a plurality of unit portions of an assembly including:
coupling a plurality of die to a redistribution structure;
forming a coating region on the redistribution structure and enclosing the plurality of die; and
forming a connection region extending through the coating region to the redistribution structure;
forming a wafer including:
forming a plurality of actuators;
forming a plurality of drive pads;
forming a plurality of connection elements on the plurality of drive pads;
forming a plurality of recesses extending into a first surface of a semiconductor body; and
forming a plurality of second recesses extending into a second surface of the semiconductor body opposite to the first surface;
forming a pair of transduction structures by singulating the wafer;
coupling the pair of transduction structures to the assembly including coupling a plurality of connection elements of a first transduction structure of the pair of transduction structures to the redistribution structure, coupling a plurality of connection elements of a second transduction structure of the pair of transduction structures, and defining a gap between the first transduction structure of the pair of transduction structures and the second transduction structure of the pair of transduction structures; and
forming a bonding region between the first transduction structure and the second transduction structure, the bonding region extends from the first transduction structure to the second transduction structure, the bonding region extends from the first transduction structure to the redistribution structure, and the bonding region extends from the second transduction structure to the redistribution structure.
17 . The method of claim 16 , wherein:
forming the wafer further includes forming a multilayer structure on the first surface of the semiconductor body;
forming the plurality of actuators further includes forming the plurality of actuators on the multilayer structure;
forming the plurality of drive pads further includes forming the plurality of drive pads on the multilayer structure;
forming the plurality of first recesses further includes forming the plurality of first recesses extending through the multilayer structure and extending into the first surface of the semiconductor body; and
forming the plurality of second recesses further includes forming the plurality of second recesses extending into the second surface of the semiconductor body and extending to the multilayer structure.
18 . The method of claim 17 , wherein forming the bonding region further includes the bonding region extending from a first multilayer structure of the first transduction structure of the pair of transduction structure to a second multilayer structure of the second transduction structure of the pair of transduction structures.
19 . The method of claim 18 , wherein the bonding region extends from the first multilayer structure to the redistribution structure and the bonding region extends from the second multilayer structure to the redistribution structure.