Package structures with non-uniform interconnect features
Microelectronic die package structures formed according to some embodiments may include a substrate having one or more solder structures. A first set of solder structures is located in a peripheral region of the substrate and a second set of solder structures is located in a central region of the substrate. A height of individual ones of the second set of solder structures is greater than a height of individual ones of the first set of solder structures. A die having a first side and a second side includes one or more conductive die pads on the first side, where individual ones of the conductive die pads are on individual ones of the first set solder structures and on individual ones of the second set solder structures. A die backside layer is on the second side of the die.
1 . A microelectronic die package structure comprising:
a substrate comprising one or more solder structures, wherein a first set of solder structures is located in a peripheral region of the substrate and a second set of solder structures is located in a central region of the substrate, wherein a height of individual ones of the second set is greater than a height of individual ones of the first set;
a die comprising a first side and a second side, wherein the first side of the die comprises one or more conductive die pads, wherein individual ones of the conductive die pads are on individual ones of the first set of solder structures and individual ones of the second set of solder structures; and
a die backside layer on the second side of the die, wherein the die backside layer comprises at least one of copper, aluminum, silver, gold or nickel and comprises a thickness of between about 50 microns to about 500 microns.
2 . The microelectronic die package structure of claim 1 , wherein the substrate further comprises one or more solder resist openings, wherein the first set of solder structures are within a first set of solder resist openings, and the second set of solder structures are within a second set of solder resist openings, wherein a lateral width of individual ones of the first set of solder resist openings is greater than a lateral width of individual ones of the second set of solder resist openings.
3 . The microelectronic die package structure of claim 2 , wherein a solder volume of individual ones of the first set of solder structures is substantially the same as a solder volume of individual ones of the second set of solder structures.
4 . The microelectronic die package structure of claim 2 , wherein the substrate further comprises a substrate pad on a bottom portion of individual ones of first sets and second sets of the solder resist openings, wherein a combined height of a substrate pad, an individual one of the first set of solder structures and a conductive die pad of the first set of solder structures is less than a combined height of a substrate pad, an individual one of the second set of solder structures and a conductive die pad of the second set of solder structures.
5 . The microelectronic die package structure of claim 1 , wherein a solder volume of individual ones of the second set of solder structures is greater than a solder volume of individual ones of the first set of solder structures.
6 . The microelectronic die package structure of claim 1 , wherein the die backside layer comprises at least one of diamond, aluminum nitride, silicon carbide or combinations thereof.
7 . The microelectronic die package structure of claim 1 , wherein an intermediate layer is between the die backside layer and the second side of the die, wherein the intermediate layer comprises at least one of titanium, nickel, vanadium, gold, or nitrogen, and comprises a thickness of between 10 nm to 500 nm.
8 . A computer system comprising;
a power supply;
one or more integrated circuit packages coupled to the power supply, wherein at least one of the integrated circuit packages comprises:
a substrate comprising one or more substrate pads;
a first set of solder structures, wherein individual ones of the first set of solder structures are on individual ones of the substrate pads;
a second set of solder structures, wherein individual ones of the second set of solder structures are on individual ones of the substrate pads, wherein the first set of solder structures are located on a peripheral region of the substrate and the second set of solder structures are located in a central region of the substrate, wherein the substrate pads on the central region of the substrate comprise a greater height than a height of the substrate pads on the peripheral region;
a die comprising a first side and a second side, wherein the first side comprises one or more conductive die pads, wherein individual ones of the conductive die pads are on individual ones of the first set and the second set of solder structures, wherein a combined height of an individual one of the substrate pad, an individual one of the second set of solder structures and an individual one of the conductive die pads is greater than a combined height of an individual one of the substrate pads, an individual one of the first set of solder structures and an individual one of the conductive die pads; and
a die backside layer on the second side of the die.
9 . The computer system of claim 8 , wherein the conductive die pads on the central region of the die comprise a greater height than a height of the conductive die pads on the peripheral region.
10 . The computer system of claim 8 , wherein a thickness of the die backside layer is between 50 microns and 500 microns.
11 . The computer system of claim 8 , wherein a solder volume of the first set of solder structures is substantially the same as a solder volume of the second set of solder structures.
12 . The computer system of claim 8 , wherein a solder resist opening in the central region of the substrate has substantially the same width as a solder resist opening in the peripheral region.
13 . The computer system of claim 8 , wherein a first joint structure comprises an individual one of the conductive die pads on an individual one of the first set of solder structures, the individual one of the first set of solder structures, and an individual substrate pad, and wherein a second joint structure comprises an individual one of the conductive die pads on an individual one of the second set of solder structures, the individual one of the second set of solder structures, and an individual substrate pad, wherein a height of the second joint structure is greater than a height of the first joint structure.
14 . The computer system of claim 8 , wherein an intermediate layer is between the die backside layer and the second side of the die, wherein the intermediate layer comprises at least one of titanium, nickel, vanadium, gold, or nitrogen, and comprises a thickness of between 10 nm to 500 nm.