Substrate treating method and substrate treating apparatus
The inventive concept provides a substrate treating method on which there is no generation of a portion on which a development is not performed, among a front surface of a substrate during a puddle process. The substrate treating method includes positioning a substrate in a treating space; forming a liquid film of a treating liquid on the substrate by supplying the treating liquid to a rotating substrate; and puddling including stopping the supplying of the treating liquid and reacting a thin film on the substrate with the liquid film on the substrate, and wherein an exhaust pressure provided at the treating space during the puddling is lower than an exhaust pressure provided at the treating space during the forming of the liquid film.
1 . A substrate treating method, comprising:
positioning a substrate in a treating space;
rotating the substrate;
forming a liquid film of a treating liquid on the substrate by supplying the treating liquid onto the substrate during the rotating;
puddling the substrate, the puddling including ceasing the supplying of the treating liquid and reacting a thin film of the substrate with the liquid film on the substrate; and
applying a constant exhaust pressure to the treating space where a first exhaust pressure during the puddling is lower than a second exhaust pressure during the forming.
2 . The method of claim 1 , wherein the applying applies such that the first exhaust pressure is zero.
3 . The method of claim 1 , further comprising:
rinsing the substrate, the rinsing including supplying a rinsing liquid to the substrate following the puddling, and
wherein the applying applies such that a third exhaust pressure is provided during the rinsing, the third exhaust pressure being higher than the first exhaust pressure.
4 . The method of claim 1 , wherein the supplying supplies the treating liquid to the substrate while changing a supply position from an edge region of the substrate to a central region of the substrate.
5 . The method of claim 1 , wherein the forming and the puddling are repeated N (N≥2) times.
6 . The method of claim 5 , wherein N is in a range of 2≤N≤5.
7 . The method of claim 1 , wherein the treating liquid is a developing liquid.
8 . The method of claim 3 , wherein the rinsing liquid is pure water.
9 . The method of claim 3 , further comprising:
drying the substrate following the rinsing.
10 . The method of claim 1 , wherein the rotating rotates the substrate at a speed of about 30 rpm or less during the forming.
11 . The method of claim 1 , wherein the rotating rotates the substrate at a speed of about 30 rpm or less, or does not rotate, during the puddling.
12 . A substrate treating method, comprising:
positioning a substrate in a treating space;
rotating the substrate;
forming a liquid film of a developing liquid on the substrate by supplying the developing liquid onto the substrate during the rotating; and
puddling the substrate, the puddling including ceasing the supplying of the developing liquid and reacting a thin film of the substrate with the liquid film of the developing liquid; and
applying a constant exhaust pressure to the treating space where a first exhaust pressure during the puddling is lower than a second exhaust pressure during the forming, and
the forming and the puddling are repeated three times.
13 . The method of claim 12 , wherein the first exhaust pressure is zero.
14 . The method of claim 12 , further comprising:
rinsing including supplying a rinsing liquid to the substrate following the puddling, and
wherein the applying applies such that a third exhaust pressure during the rinsing is higher than the first exhaust pressure during the puddling.
15 . The method of claim 1 , further comprising:
rinsing the substrate, the rinsing including supplying a rinsing liquid to the substrate following the puddling,
wherein the substrate does not rotate during the puddling,
wherein the applying applies such that a third exhaust pressure is provided during the rinsing, the third exhaust pressure being higher than the first exhaust pressure, the first exhaust pressure being zero.