Metal line profile shaping for advanced integrated circuit structure fabrication
Embodiments of the disclosure are in the field of integrated circuit structure fabrication. In an example, an integrated circuit structure includes a dielectric material structure having a trench therein. A conductive interconnect line in the trench, the conductive interconnect line having a length and a width, the width having a cross-sectional profile, wherein the cross-sectional profile of the width of the conductive interconnect line has a bottom lateral width, a mid-height lateral width, and a top lateral width, and wherein the mid-height lateral width is greater than the bottom lateral width, and the mid-height lateral width is greater than the top lateral width.
1 . An integrated circuit structure, comprising:
a dielectric material structure having a trench therein;
a conductive interconnect line in the trench, the conductive interconnect line having a length and a cross-sectional profile orthogonal to the length, wherein the cross-sectional profile is a circular cross-sectional profile, wherein the circular cross-sectional profile has a bottom lateral width, a mid-height lateral width, and a top lateral width, and wherein the mid-height lateral width is greater than the bottom lateral width, and the mid-height lateral width is greater than the top lateral width; and
a conductive via coupled to conductive interconnect line, the conductive via having a center laterally offset from a center of the conductive line along a vertical axis, and the conductive via on a top and along a first side of the conductive interconnect line but not along a second side of the conductive line, the second side laterally opposite the first side.
2 . The integrated circuit structure of claim 1 , wherein the mid-height lateral width is at least 50% greater than the bottom lateral width and at least 50% greater than the top lateral width.
3 . The integrated circuit structure of claim 1 , wherein the circular cross-sectional profile has one or more scalloped surfaces.
4 . The integrated circuit structure of claim 1 , wherein the dielectric material structure comprises a stack of dielectric layers of differing composition.