Granted Patent B2

US 12,635,366 · App. 17/975,894 · Granted May 19, 2026

Inventors: Renquan Gu (Beijing, CN); Qi Yao (Beijing, CN); Jaiil Ryu (Beijing, CN); Zhiwei Liang (Beijing, CN); Yingwei Liu (Beijing, CN); Wusheng Li (Beijing, CN); Muxin Di (Beijing, CN)

Assignee: BOE TECHNOLOGY GROUP CO., LTD.

H10K59/131H10K59/126H10K59/1201

Abstract

Claims (51)

1 . An array substrate, comprising:

an interposer substrate, a fan-out region disposed on one side of the interposer substrate, a thin-film transistor disposed on one side, distal from the interposer substrate, of the fan-out region, and a bonding connection line disposed on the other side of the interposer substrate;

an orthographic projection of the fan-out region onto the interposer substrate is partially overlapped with an orthographic projection of the thin-film transistor onto the interposer substrate; and

the bonding connection line is configured to be connected to a drive circuit, and comprises a first lead and a second lead that are insulated from each other;

wherein the interposer substrate is provided with a first interposer via hole and a second interposer via hole, conductive structure is arranged in the first interposer via hole and the second interposer via hole, the first lead is electrically connected to the thin-film transistor by the conductive structure in the first interposer via hole and the fan-out region, and the second lead is electrically connected to the thin-film transistor by the conductive structure in the second interposer via hole and the fan-out region, wherein the first interposer via hole and the second interposer via hole are respectively arranged on a first end and a second end of the interposer substrate, the first end is opposite to the second end.

2 . The array substrate according to claim 1 , wherein the first lead is disposed on the first end of the interposer substrate and is configured to be connected to a gate drive circuit in the drive circuit, and the second lead is disposed on the second end of the interposer substrate and is configured to be connected to a data drive circuit in the drive circuit;

the fan-out region comprises a first sub-fan-out region and a second sub-fan-out region, wherein the first sub-fan-out region and the second sub-fan-out region are respectively disposed on the first end and the second end of the interposer substrate; and

a gate of the thin-film transistor is electrically connected to the conductive structure in the first interposer via hole by the first sub-fan-out region, and a source or a drain of the thin-film transistor is electrically connected to the conductive structure in the second interposer via hole by the second sub-fan-out region.

3 . The array substrate according to claim 1 , wherein the array substrate further comprises a shield layer disposed on the side, distal from the bonding connection line, of the interposer substrate;

the shield layer comprises a shield pattern and a connecting lead connected with the shield pattern, and the shield pattern is the same as an active layer pattern of the thin-film transistor.

4 . The array substrate according to claim 3 , wherein the shield layer is electrically connected to the drive circuit by a connecting line through a fourth interposer via hole to apply a constant voltage.

5 . The array substrate according to claim 1 , wherein the thin-film transistor comprises a gate electrode, a gate insulating layer, an active layer pattern, and a source-drain pattern that are stacked in a direction distal from the interposer substrate, wherein the source-drain pattern comprises a source and a drain.

6 . The array substrate according to claim 5 , wherein the gate of the thin-film transistor and the conductive structure in the first interposer via hole are integrally formed.

7 . The array substrate according to claim 1 , wherein the thin-film transistor comprises a first gate electrode, a first gate insulating layer, an active layer pattern, a second gate insulating layer, a second gate electrode, a passivation layer, and a source-drain pattern that are stacked in a direction distal from the interposer substrate, wherein the source-drain pattern comprises a source and a drain.

8 . The array substrate according to claim 7 , wherein the second gate electrode of the thin-film transistor is electrically connected to the source-drain pattern by a first via hole, and the first gate electrode of the thin-film transistor is electrically connected to the source-drain pattern by a second via hole.

9 . The array substrate according to claim 7 , wherein the first gate electrode of the thin-film transistor is arranged on a same layer with the fan-out region.

10 . The array substrate according to claim 1 , wherein the thin-film transistor comprises an active layer pattern, a gate insulating layer, a gate pattern, a passivation layer, and a source-drain pattern that are stacked in a direction distal from the interposer substrate, wherein the gate pattern comprises a gate and a gate lead, and the source-drain pattern comprises a source and a drain.

11 . The array substrate according to claim 1 , wherein the fan-out region comprises a hollow part, and the hollow part is overlapped with an active layer pattern of the thin film transistor.

12 . The array substrate according to claim 1 , wherein the interposer substrate is further provided with a third interposer via hole, a conductive structure is arranged in the third interposer via hole, a VDD line and a VSS line of the thin-film transistor are electrically connected to the bonding connection line by the fan-out region and the conductive structure in the third interposer via hole.

13 . The array substrate according to claim 1 , wherein the array substrate further comprises a bonding pad disposed on a side, distal from the interposer substrate, of the thin-film transistor.

14 . A manufacturing method of the array substrate according to claim 1 , comprising:

forming a sacrificial layer on a carrier substrate by using a separation material;

forming a bonding connection line on a side, distal from the carrier substrate, of the sacrificial layer, wherein the bonding connection line comprises a first lead and a second lead that are insulated from each other;

forming an interposer substrate on a side, formed with the bonding connection line, of the sacrificial layer, wherein the interposer substrate is provided with a first interposer via hole and a second interposer via hole, and an adhesion between the separation material and the carrier substrate is greater than an adhesion between the separation material and the bonding connection line, and is greater than an adhesion between the separation material and the interposer substrate;

forming a fan-out region, a thin-film transistor and conductive structure in the first interposer via hole and the second interposer via hole on a side, distal from the carrier substrate, of the interposer substrate, wherein an orthographic projection of the fan-out region onto the interposer substrate is partially overlapped with an orthographic projection of the thin-film transistor onto the interposer substrate, the first lead is electrically connected to the thin-film transistor by the conductive structure in the first interposer via hole and the fan-out region, and the second lead is electrically connected to the thin-film transistor by the conductive structure in the second interposer via hole and the fan-out region; and

irradiating the sacrificial layer with laser from a side, distal from the thin-film transistor, of the carrier substrate to separate the sacrificial layer from the bonding connection line and the interposer substrate to peel off the carrier substrate.

15 . The method according to claim 14 , wherein forming the interposer substrate on the side, formed with the bonding connection line, of the sacrificial layer comprises:

forming a substrate layer by coating and curing an organic resin material on the side, formed with the bonding connection line, of the sacrificial layer, wherein the first interposer via hole and the second interposer via hole are respectively arranged on a first end and a second end of the substrate layer, the first end is opposite to the second end; and

respectively forming the first interposer via hole and the second interposer via hole on the first end and the second end of the substrate layer to obtain the interpose substrate;

wherein the fan-out region comprises a first sub-fan-out region and a second sub-fan-out region, wherein the first sub-fan-out region and the second sub-fan-out region are respectively disposed on the first end and the second end of the interposer substrate; a gate of the thin-film transistor is electrically connected to the first lead by the conductive structure in the first interposer via hole and the first sub-fan-out region, and a source or a drain of the thin-film transistor is electrically connected to the second lead by the conductive structure in the second interposer via hole and the second sub-fan-out region, the first lead is configured to be connected to a gate drive circuit in the drive circuit, and the second lead is configured to be connected a data drive circuit in the drive circuit.

16 . The method according to claim 14 , wherein forming the fan-out region, the thin-film transistor and the conductive structure in the first interposer via hole and the second interposer via hole on the side, distal from the carrier substrate, of the interposer substrate comprises:

forming a conductive layer on the side, distal from the carrier substrate, of the interposer substrate by using a conductive material;

patterning the conductive layer to form the fan-out region, a gate of the thin-film transistor and the conductive structure in the first interposer via hole and the second interposer via hole; and

sequentially forming a gate insulating layer, an active layer pattern, and a source-drain pattern of the thin-film transistor on a side, formed with the fan-out region, the gate and the conductive structure, of the interposer substrate;

or

forming the conductive layer on the side, distal from the carrier substrate, of the interposer substrate by using the conductive material;

forming the conductive structure in the first interposer via hole and the second interposer via hole by patterning the conductive layer; and

sequentially forming the fan-out region and the thin-film transistor on a side, formed with the conductive structure, of the interposer substrate.

17 . The method according to claim 16 , wherein before forming the active layer pattern of the thin-film transistor, the method further comprises:

forming a shield layer on the side, formed with at least the fan-out region and the conductive structure, of the interposer substrate, wherein the shield layer comprises a shield pattern and a connecting lead connected with the shield pattern, and the shield pattern is the same as an active layer pattern of the thin-film transistor.

18 . A display device, comprising: a light-emitting unit and an array substrate, wherein

the light-emitting unit is disposed on a side, distal from the interposer substrate, of the thin-film transistor in the array substrate; and

the array substrate, comprising:

an interposer substrate, a fan-out region disposed on one side of the interposer substrate, a thin-film transistor disposed on one side, distal from the interposer substrate, of the fan-out region, and a bonding connection line disposed on the other side of the interposer substrate;

an orthographic projection of the fan-out region onto the interposer substrate is partially overlapped with an orthographic projection of the thin-film transistor onto the interposer substrate; and

the bonding connection line is configured to be connected to a drive circuit, and comprises a first lead and a second lead that are insulated from each other;

wherein the interposer substrate is provided with a first interposer via hole and a second interposer via hole, conductive structure is arranged in the first interposer via hole and the second interposer via hole, the first lead is electrically connected to the thin-film transistor by the conductive structure in the first interposer via hole and the fan-out region, and the second lead is electrically connected to the thin-film transistor by the conductive structure in the second interposer via hole and the fan-out region, wherein the first interposer via hole and the second interposer via hole are respectively arranged on a first end and a second end of the interposer substrate, the first end is opposite to the second end.

19 . The display device according to claim 18 , further comprising a drive circuit, wherein

the drive circuit is disposed on a side, distal from the thin-film transistor, of the interposer substrate, and the drive circuit is electrically connected to the bonding connection line in the array substrate.

20 . The display device according to claim 18 , wherein the light-emitting unit is arranged on a bonding pad of the array substrate by bonding; and

the light-emitting unit comprises a micro light-emitting diode, an organic light-emitting diode, or a quantum dot light-emitting diode.

Assignments (1)

Continuity (2)

References Cited (22)