Determination of a bias voltage by applying a series of increasing currents to bit line of memory cell in a neural network
A first example comprises programming a memory cell to store a value; applying a series of currents of increasing size to a bit line of the memory cell; and measuring a voltage of a control gate terminal of the memory cell to determine a bias. A second example comprises programming a memory cell to store a value; applying a predetermined current to a bit line of the memory cell; and measuring a voltage of a control gate terminal of the memory cell to determine a bias.
1 . A method comprising:
programming a memory cell to store a value;
applying a series of currents of increasing size to a bit line of the memory cell; and
when a voltage of the bit line exceeds a reference voltage, measuring a voltage of a control gate terminal of the memory cell to determine a bias.
2 . The method of claim 1 , comprising:
storing the bias.
3 . The method of claim 2 , comprising:
applying the bias to one or more memory cells in an array of memory cells during an operation on the one or more memory cells.
4 . The method of claim 3 , wherein the array is an analog neural memory array.
5 . The method of claim 2 , comprising:
performing the programming, applying, measuring, and storing steps for a plurality of different operating temperatures of the memory cell.
6 . A system comprising:
a circuit to program a memory cell to store a value; and
a circuit to apply a series of currents of increasing size to a bit line of the memory cell and to measure a voltage of a control gate terminal of the memory cell to determine a bias when a voltage of the bit line exceeds a reference voltage.
7 . The system of claim 6 , comprising:
a lookup table to store the bias.