IP Library › Granted Patent US 12,648,367
Granted Patent B1
US 12,648,367 · App. 18/380,614 · Granted Jun 2, 2026

Superconducting device with asymmetric impedance

Inventor: Faraz Najafi (Palo Alto, CA)
Assignee: PsiQuantum Corp.
H10N69/00H10N60/30
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Quick Facts
Patent No.
US 12,648,367
App. No.
18/380,614
Granted
Jun 2, 2026
Kind
B1
Abstract

An electronic component having an asymmetric impedance is provided. The component includes first, second and third branches that connect at a common node. The component includes a first portion of superconducting material disposed along the first branch and a second portion of superconducting material disposed along the second branch. The component includes a first device disposed along the first branch and configured to transition the second portion of the superconducting material to a non-superconducting state when a current between a first terminal of the first device and a second terminal of the first device exceeds a first threshold value and a second device disposed along the second branch and configured to transition the first portion of the superconducting material to a non-superconducting state when a current between a first terminal of the second device and a second terminal of the second device exceeds a second threshold value.

Claims (25)

1 . A diode device, comprising:

a resistive component coupled to a first terminal; and

a superconducting component coupled in series between the resistive component and a second terminal;

wherein, under a predefined range of operating conditions:

a current having a first value supplied to the second terminal causes the superconducting component to transition to a non-superconducting state; and

the current having the first value supplied to the first terminal does not cause the superconducting component to transition to the non-superconducting state such that the diode device has a different impedance between the first terminal and the second terminal as compared to an impedance between the second terminal and the first terminal.

2 . The diode device of claim 1 , wherein the resistive component comprises a first resistor having a first resistance, wherein the first resistance is selected to define the predefined range of operating conditions.

3 . The diode device of claim 2 , wherein the resistive component further comprises a second resistor having a second resistance, wherein the first resistance and the second resistance are selected to define the predefined range of operating conditions.

4 . The diode device of claim 1 , further comprising a first heating component coupled to a first portion of the superconducting component and configured to generate sufficient heat to cause the first portion of the superconducting component to transition from a superconducting state to the non-superconducting state.

5 . The diode device of claim 4 , wherein the first heating component is composed of a superconducting material.

6 . The diode device of claim 4 , wherein the first heating component is composed of a semiconducting material.

7 . The diode device of claim 4 , wherein the first portion of the superconducting component includes a constriction.

8 . The diode device of claim 4 , wherein the first heating component is coupled to the first portion of the superconducting component via an electrically-insulating material.

9 . The diode device of claim 4 , further comprising a second heating component coupled to a second portion of the superconducting component and configured to generate sufficient heat to cause the second portion of the superconducting component to transition from the superconducting state to the non-superconducting state.

10 . The diode device of claim 9 , wherein the first portion of the superconducting component has a first resistance while in the non-superconducting state and the second portion of the superconducting component has a second resistance while in the non-superconducting state, and wherein the first resistance is different than the second resistance.

11 . The diode device of claim 1 , wherein the diode device is a thin-film device fabricated on a substrate.

12 . The diode device of claim 1 , wherein the superconducting component comprises a plurality of nanowires.

13 . The diode device of claim 1 , wherein the superconducting component comprises a first impedance amplifier, the first impedance amplifier configured to transition between an inactive state and an active state in accordance with a first current threshold.

14 . The diode device of claim 13 , wherein the first impedance amplifier is in the active state while a current through the first impedance amplifier is greater than the first current threshold, and wherein an impedance of the first impedance amplifier is increased while in the active state.

15 . The diode device of claim 13 , wherein the superconducting component further comprises a second impedance amplifier, the second impedance amplifier configured to transition between the off state and the on state in accordance with a second current threshold, wherein the second current threshold is different than the first current threshold.

16 . The diode device of claim 1 , wherein the superconducting component comprises a variable resistor.

17 . The diode device of claim 1 , wherein the diode device is a passive device that does not consume power when not in use.

18 . The diode device of claim 1 , wherein the predefined range of operating conditions comprise an operating temperature that is below a superconducting temperature threshold for the superconducting component.

19 . The diode device of claim 1 , further comprising a piezoelectric component coupled to a portion of the superconducting component and configured to generate sufficient strain to cause the portion of the superconducting component to transition from a superconducting state to the non-superconducting state.

20 . The diode device of claim 19 , wherein the piezoelectric component comprises a piezoelectric substrate.

Continuity (3)
Continuation 17826088 · May 26, 2022
Continuation 17033337 · Sep 25, 2020
Provisional Application 62906680 · Sep 26, 2019
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