Granted Patent B2

US 12,652,020 · App. 18/982,120 · Granted Jun 9, 2026

Inventors: Chencheng Zhou (Shenzhen, CN); Guojun Weng (Shenzhen, CN)

Assignee: Shenzhen Newsonic Technologies Co., Ltd.

H03H9/25H03H3/10H03H9/02834H03H9/6489

Abstract

Claims (51)

1 . A surface acoustic wave resonator device, comprising:

a base substrate;

a first layer, disposed on the base substrate;

an interdigital electrode structure, disposed on the base substrate and at least partially embedded in the first layer, wherein the interdigital electrode structure comprises a plurality of interdigital electrodes extending along a first direction and arranged along a second direction, and the interdigital electrode structure has an interdigital electrode central region, and a first interdigital electrode end region and a second interdigital electrode end region which are located at two opposite sides of the interdigital electrode central region in the first direction; and

a second layer, located on a side of the first layer and the interdigital electrode structure away from the base substrate;

wherein the interdigital electrode structure is surrounded and wrapped by the first layer in a direction parallel to a main surface of the base substrate, and a surface of the interdigital electrode structure at a side away from the base substrate is covered by and in contact with the second layer,

wherein the first layer and the second layer are two layers with an interface between the first layer and the second layer, the interdigital electrode structure comprises a body structure embedded in the first layer and a protruding structure embedded in the second layer, and a surface of the body structure at a side away from the base substrate and a surface of the first layer away from the base structure are level with each other in the direction parallel to the main surface of the base substrate,

wherein the interdigital electrode structure comprises a seed layer and an electrode material layer, and in the body structure, the seed layer covers a sidewall of the electrode material layer and laterally sandwiched between the electrode material layer and the first layer, and

wherein in the protruding structure, a sidewall of the electrode material layer is not covered by the seed layer and is in contact with the second layer.

2 . The surface acoustic wave resonator device according to claim 1 , wherein surfaces, at a side away from the base substrate, of portions of the plurality of interdigital electrodes located in the interdigital electrode central region are level with a surface of the first layer at a side away from the base substrate in the direction parallel to the main surface of the base substrate.

3 . The surface acoustic wave resonator device according to claim 1 , wherein the seed layer also covers a surface of the electrode material layer at a side close to the base substrate, and is located between the electrode material layer and the base substrate.

4 . The surface acoustic wave resonator device according to claim 3 , wherein at least a surface of the electrode material layer at a side away from the base substrate is in contact with the second layer.

5 . The surface acoustic wave resonator device according to claim 1 ,

wherein the protruding structure is located in the first interdigital electrode end region and the second interdigital electrode end region, and the protruding structure is protruded from a surface of the body structure at a side away from the base substrate in a direction perpendicular to the main surface of the base substrate.

6 . The surface acoustic wave resonator device according to claim 5 , wherein the body structure and the protruding structure are integrally formed and have sidewalls aligned in the direction perpendicular to the main surface of the base substrate.

7 . The surface acoustic wave resonator device according to claim 1 , wherein the first layer is a first temperature compensation layer, and the second layer is a second temperature compensation layer.

8 . The surface acoustic wave resonator device according to claim 1 , wherein a sidewall of the body structure is in contact with the first layer; and the surface of the body structure at the side away from the base substrate, a sidewall of the protruding structure, and a surface of the protruding structure at a side away from the base substrate are in contact with the second layer.

9 . A surface acoustic wave filter, comprising the surface acoustic wave resonator device according to claim 1 .

10 . A method for manufacturing a surface acoustic wave resonator device, comprising:

providing a base substrate;

forming a first layer on the base substrate;

performing a patterning process on the first layer to form a through hole exposing the base substrate; and

forming an interdigital electrode structure in the through hole of the first layer, such that the interdigital electrode structure is disposed on the base substrate and at least partially embedded in the first layer; wherein the interdigital electrode structure comprises a plurality of interdigital electrodes extending along a first direction and arranged along a second direction, and the interdigital electrode structure has an interdigital electrode central region, and a first interdigital electrode end region and a second interdigital electrode end region which are located at two opposite sides of the interdigital electrode central region in the first direction; and

forming a second layer on a side of the first layer and the interdigital electrode structure away from the base substrate,

wherein the interdigital electrode structure is surrounded and wrapped by the first layer in a direction parallel to a main surface of the base substrate, and a surface of the interdigital electrode structure at a side away from the base substrate is covered by and in contact with the second layer,

wherein the first layer and the second layer are two layers with an interface between the first layer and the second layer, the interdigital electrode structure comprises a body structure embedded in the first layer and a protruding structure embedded in the second layer, and a surface of the body structure at a side away from the base substrate and a surface of the first layer away from the base structure are level with each other in the direction parallel to the main surface of the base substrate,

wherein the interdigital electrode structure comprises a seed layer and an electrode material layer, and in the body structure, the seed layer covers a sidewall of the electrode material layer and laterally sandwiched between the electrode material layer and the first layer, and

wherein in the protruding structure, a sidewall of the electrode material layer is not covered by the seed layer and is in contact with the second layer.

11 . The method for manufacturing the surface acoustic wave resonator device according to claim 10 , wherein forming the interdigital electrode structure in the through hole of the first layer comprises:

forming an interdigital electrode structure material layer in the through hole; and

performing a planarization process on the interdigital electrode structure material layer and the first layer.

12 . The method for manufacturing the surface acoustic wave resonator device according to claim 11 , wherein forming the interdigital electrode structure material layer in the through hole comprises:

forming the seed layer, wherein the seed layer lines a surface of the through hole and covers a surface of the first layer at a side away from the base substrate, and a portion of the seed layer located in the through hole defines a recess; and forming the electrode material layer in the recess,

wherein after the planarization process, remaining parts of the seed layer and the electrode material layer constitute the interdigital electrode structure.

13 . The method for manufacturing the surface acoustic wave resonator device according to claim 10 , wherein forming the interdigital electrode structure in the through hole comprises:

depositing the seed layer on the base substrate having been exposed and the first layer having been patterned, wherein a portion of the seed layer located in the through hole defines a recess;

filling an electrode metal in the recess; and

performing a planarization process on the electrode metal, the first layer and the seed layer, such that surfaces of the first layer, the electrode metal and the seed layer are level with each other, wherein after the planarization process, the portion of the seed layer and the electrode metal located in the through hole constitute the interdigital electrode structure.

14 . The method for manufacturing the surface acoustic wave resonator device according to claim 13 , wherein performing the planarization process on the electrode metal, the first layer and the seed layer comprises:

planarizing the electrode metal, the first layer and the seed layer by using a chemical mechanical polishing process; and

etching the electrode metal, the first layer and the seed layer which have been planarized by using an ion beam etching process, so that the electrode metal, the first layer and the seed layer are located at a preset target height.

15 . The method for manufacturing the surface acoustic wave resonator device according to claim 10 , wherein before forming the second layer, further comprising:

forming a mask layer on the first interdigital electrode end region and the second interdigital electrode end region of the interdigital electrode structure; and

performing an etching process on the interdigital electrode structure by using the mask layer as an etching mask, so as to thin portions of the interdigital electrode structure located in other regions other than the first interdigital electrode end region and the second interdigital electrode end region, so that the first interdigital electrode end region and the second interdigital electrode end region of the interdigital electrode structure are formed with the protruding structure.

16 . The method for manufacturing the surface acoustic wave resonator device according to claim 10 , wherein the interdigital electrode structure further comprises a first bus bar and a second bus bar; and

the method further comprises:

etching the second layer to form a first opening and a second opening in the second layer to expose the first bus bar and the second bus bar, respectively; and

forming a first metal layer on the first bus bar exposed by the first opening, and forming a second metal layer on the second bus bar exposed by the second opening.

17 . The method for manufacturing the surface acoustic wave resonator device according to claim 16 , wherein after forming the first metal layer on the first bus bar and forming the second metal layer on the second bus bar, further comprising:

depositing a passivation layer on the first metal layer, the second metal layer and the second layer; and

etching the passivation layer to expose the first metal layer and the second metal layer.

Assignments (1)

Priority Claims (1)

Continuity (2)

References Cited (9)