Power module with integrated temperature sensing conductor loop
A power module. The power module includes a substrate and at least one power transistor arranged on a bottom side of the substrate. The power module includes at least one power connection connected to the substrate. A conductor loop for measuring temperature is arranged on an inner or outer substrate layer or a top side opposite the power transistor.
1 . A power module, comprising:
a multi-layer substrate including a bottom side of the substrate, wherein the bottom side is a lowest layer of the substrate having conducting elements;
at least one power transistor arranged on the bottom side of the substrate;
at least one power connection connected to the substrate; and
a conductor loop configured to measure temperature is arranged on an inner or outer substrate layer or a top side of the substrate opposite the power transistor.
2 . The power module as recited in claim 1 , wherein the conductor loop has a meandering shape.
3 . The power module as recited in claim 1 , wherein the conductor loop is arranged above a source of the power transistor.
4 . The power module as recited in claim 1 , wherein the conductor loop extends over a plurality of substrate layers.
5 . The power module as recited in claim 1 , wherein at least two power transistors are arranged on the substrate, wherein a separate conductor loop for measuring temperature is arranged above each of the at least two power transistors in an inner substrate layer or the top side of the substrate.
6 . The power module as recited in claim 1 , wherein the conductor loop includes a temperature-dependent resistor.
7 . The power module as recited in claim 5 , further comprising:
at least one application-specific integrated circuit connected to the at least two power transistors and to the separate conductor loops.
8 . The power module as recited in claim 7 , wherein the application-specific integrated circuit is configured so that it controls the loading of the at least two power transistors in such a way that the temperature measured by the conductor loops is equal.
9 . The power module as recited in claim 1 , wherein the substrate includes a multi-layer low-temperature co-fired ceramic.
10 . The power module as recited in claim 1 , wherein the temperature measurement takes place in the conductor loop by way of a four-point measurement or an end-of-line calibration.
11 . The power module as recited in claim 1 , wherein a plurality of conductor loops are arranged in different substrate layers and connected in series.
12 . The power module as recited in claim 1 , wherein the power module includes at least two substrates.
13 . The power module as recited in claim 1 , further comprising a plurality of power semiconductor devices embedded between substrate layers.
14 . The power module as recited in claim 12 , further comprising a plurality of power semiconductor devices embedded between the two substrates, wherein conductor loops for measuring temperature are arranged in at least one of the substrates.
15 . The power module as recited in claim 1 , further comprising at least one power semiconductor device, wherein a further conductor loop for measuring temperature is arranged on a top side of the substrate opposite the power semiconductor device.