IP Library Granted Patent US 12,687,793
Granted Patent B2
US 12,687,793 · App. 17/561,721 · Granted Jul 21, 2026

Multiple targets on substrate layers for layer alignment

Inventor: Shakul Tandon (Hillsboro, OR)
Assignee: Intel Corporation
G03F9/7076G03F1/42G03F1/84G03F7/70633G03F7/70683G03F9/7046G06T7/0004G06T7/66G06T7/73H01J37/222H10W46/00G06T2207/30148H10W46/301H10W46/401
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Quick Facts
Patent No.
US 12,687,793
App. No.
17/561,721
Filed
Dec 24, 2021
Granted
Jul 21, 2026
Kind
B2
Art Unit
2893
USPC
257/600
Abstract

Embodiments described herein may be related to apparatuses, processes, and techniques related to using full stack overlay cell (FSOL) targets within lithography masks and on fabricated layers of a substrate in order to align or to assess the alignment of fabricated layers of the substrate during the substrate manufacturing process. Other embodiments may be described and/or claimed.

Claims (13)

1 . A substrate comprising:

a plurality of layers;

a plurality of targets on each of the plurality of layers; wherein individual ones of the plurality of the targets on a first layer of the plurality of the layers overlap, respectively, with a corresponding one of the plurality of the targets on a second layer of the plurality of layers in a top-down view;

wherein the plurality of targets on the first layer include a first pattern with a metal feature having a longest dimension along a first direction;

wherein the plurality of targets on the second layer include a second pattern with a metal feature overlapping the metal feature of the first pattern in the top-down view, the metal feature of the second pattern having a longest dimension along a second direction, the second direction orthogonal to the first direction in the top-down view; and

wherein the first pattern is different than the second pattern.

2 . The substrate of claim 1 , wherein the metal feature of the first pattern is symmetric around an axis.

3 . The substrate of claim 2 , wherein the axis is a first axis; and wherein a second metal feature of the first pattern is symmetric around a second axis that is orthogonal to the first axis.

4 . The substrate of claim 1 , wherein a comparison of the plurality of targets on the first layer with the plurality of targets on the second layer determines a degree of alignment between the first layer and the second layer.

5 . The substrate of claim 1 , wherein the metal features of the first pattern and the second pattern are not electrically coupled with other metal features in the substrate.

6 . The substrate of claim 1 , wherein the plurality of targets on the first layer and the plurality of targets on the second layer are arranged in a grid.

7 . The substrate of claim 6 , wherein a horizontal distance or a vertical distance between a subset of the plurality of target regions in the first layer is less than 1 mm.

8 . The substrate of claim 1 , wherein a width of the target region or a height of the target region is 2 μm or less.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 28, 2023
From: TANDON, SHAKUL
To: INTEL CORPORATION
Reel/Frame 064149/0138 →
Continuity (1)
Related Publication 20230205104A1 · Jun 29, 2023
References Cited (3)
US 10890436B2 · Amir · 2021 [cited by examiner]
US 20170357154A1 · Oh · 2017 [cited by examiner]
M. Harada et. al., “In-die overlay metrology method using SEM images”, J. Micro/Nanolith. MEMS MOEMS, vol. 17, 044004 (Year: 2018). [cited by examiner]