Light emitting structures formed in opening in a mask and preparation method therefor
Disclosed are a light emitting structure and a preparation method therefor. The method includes: forming a mask layer on a n-type substrate, disposing a plurality of openings in the mask layer; and forming a light emitting unit in each of the plurality of openings, including: forming a metal atomic layer in the opening; forming an n-type semiconductor layer on the metal atomic layer, and forming a light extraction structure on the n-type semiconductor layer; and sequentially forming an active layer and a p-type semiconductor layer on the n-type semiconductor layer and the light extraction structure. In this way, step of peeling off the substrate may be avoided. In addition, with a plurality of discrete light emitting structures formed on the same substrate, a step of cutting a device is avoided, and damage to the device can be prevented.
1 . A light emitting structure, comprising:
a substrate, wherein the substrate is an n-type substrate;
a mask layer formed on the substrate, wherein a plurality of openings are disposed in the mask layer; and
a plurality of light emitting units formed in the plurality of openings respectively, wherein each of the plurality of light emitting units sequentially comprises a metal atomic layer, an n-type semiconductor layer, an active layer, and a p-type semiconductor layer from bottom to top, at least one groove is disposed on the n-type semiconductor layer, and a light extraction structure is disposed in the at least one groove;
a first electrode separately disposed on each of the plurality of light emitting units; and
a second electrode disposed on a side of the substrate away from the mask layer, wherein the plurality of light emitting units formed in the plurality of openings respectively share the second electrode.
2 . The light emitting structure according to claim 1 , wherein
the metal atomic layer is an Al atomic layer or a Mg atomic layer.
3 . The light emitting structure according to claim 1 , wherein each of the plurality of light emitting units further comprises:
a buffer layer disposed between the metal atomic layer and the n-type semiconductor layer.
4 . The light emitting structure according to claim 3 , wherein each of the plurality of light emitting units further comprises:
at least one porous semiconductor layer disposed between the buffer layer and the n-type semiconductor layer.
5 . The light emitting structure according to claim 4 , wherein
the at least one porous semiconductor layer comprises a plurality of porous semiconductor layers, and different porous semiconductor layers have different porosities.
6 . The light emitting structure according to claim 4 , wherein the porous semiconductor layer is made of porous gallium nitride.
7 . The light emitting structure according to claim 1 , wherein
the light extraction structure comprises a DBR structure and/or a photonic crystal structure.
8 . The light emitting structure according to claim 1 , wherein
three adjacent light emitting units constitute a pixel unit, and contents of indium in the light extraction structures of the three light emitting units are different from each other.
9 . The light emitting structure according to claim 8 , wherein
in each pixel unit, areas of openings corresponding to the three light emitting units are different from each other.
10 . The light emitting structure according to claim 1 , wherein a side, facing the substrate, of the active layer is higher than a side, facing away from the substrate, of the mask layer.