IP Library › Granted Patent US 12,707,816
Granted Patent B2
US 12,707,816 · App. 17/981,263 · Granted Aug 11, 2026

Display apparatus

Inventors: Jeehoon Kim (Yongin-si, KR); Donghan Kang (Yongin-si, KR); Shinhyuk Yang (Yongin-si, KR)
Assignee: Samsung Display Co., Ltd.
H10K59/1216H10K59/1213H10K59/131H10D30/6755H10D86/423H10D86/443H10D86/481H10D86/60
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Quick Facts
Patent No.
US 12,707,816
App. No.
17/981,263
Filed
Nov 4, 2022
Granted
Aug 11, 2026
Kind
B2
Art Unit
2897
USPC
257/40
Abstract

A display apparatus includes: a transistor; a storage capacitor connected to the transistor; and a light-emitting diode electrically connected to the transistor and the storage capacitor, wherein the transistor includes: a gate electrode on a substrate and having a first sub-layer and a second sub-layer on the first sub-layer; and a semiconductor layer having a channel area, a first low-resistance area, and a second low-resistance area, wherein the channel area overlaps the gate electrode, and the first and second low-resistance areas are on both sides of the channel area, a width of the first sub-layer is greater than a width of the second sub-layer, the channel area is arranged along a side surface of the second sub-layer, the storage capacitor includes a first capacitor electrode and a second capacitor electrode, and the first capacitor electrode is on a same layer and includes a same material as the gate electrode.

Claims (55)

1 . A display apparatus comprising:

a thin-film transistor;

a storage capacitor electrically connected to the thin-film transistor; and

a light-emitting diode electrically connected to the thin-film transistor and the storage capacitor,

wherein the thin-film transistor comprises:

a gate electrode on a substrate and comprising a first sub-layer and a second sub-layer on the first sub-layer;

a semiconductor layer on the gate electrode and comprising a channel area, a first low-resistance area, and a second low-resistance area, wherein the channel area overlaps the gate electrode, and the first and second low-resistance areas are at a same layer and extending at both sides of the channel area, and

a first electrode overlapping and electrically connected to one of the first low-resistance area or the second low-resistance area, and the channel area between the first electrode and the gate electrode in a thickness direction of the display apparatus,

wherein a width of the first sub-layer is greater than a width of the second sublayer,

the channel area is arranged along a side surface of the second sub-layer,

the storage capacitor comprises a first capacitor electrode and a second capacitor electrode on the first capacitor electrode, and

the first capacitor electrode is on a same layer and comprises a same material as the gate electrode.

2 . The display apparatus of claim 1 , wherein the first capacitor electrode comprises:

a first capacitor sub-layer comprising a same material as the first sub-layer; and

a second capacitor sub-layer comprising a same material as the second sub-layer.

3 . The display apparatus of claim 1 , wherein a thickness of the second sub-layer is greater than a thickness of the first sub-layer.

4 . The display apparatus of claim 1 , wherein the first sub-layer comprises tail areas extending from a point at which an upper surface of the first sub-layer meets the side surface of the second sub-layer, and

a length of each tail area is equal to or greater than 1 μm.

5 . The display apparatus of claim 1 , wherein the gate electrode is a portion of a first conductive pattern comprising the first capacitor electrode.

6 . The display apparatus of claim 5 , wherein the first conductive pattern comprises a first portion, which overlaps the second capacitor electrode in a plan view, and a second portion, which protrudes from the first portion in one direction.

7 . The display apparatus of claim 1 , wherein the storage capacitor comprises a connection electrode between and overlapping the first capacitor electrode and the second capacitor electrode, and

the connection electrode is in contact with the second capacitor electrode.

8 . The display apparatus of claim 7 , wherein the connection electrode is on a same layer and comprises a same material as the semiconductor layer.

9 . The display apparatus of claim 1 , wherein the semiconductor layer comprises an oxide semiconductor material.

10 . The display apparatus of claim 1 , wherein

the first electrode comprises a tri-layer comprising a conductive material.

11 . A display apparatus comprising:

a substrate;

a driving power line extending on the substrate in a first direction;

a driving thin-film transistor electrically connected to the driving power line; and

a storage capacitor electrically connected to the driving thin-film transistor and comprising a first capacitor electrode and a second capacitor electrode overlapping the first capacitor electrode,

wherein the driving thin-film transistor comprises:

a driving gate electrode comprising a first sub-layer on the substrate and a second sub-layer on the first sub-layer;

a gate insulating layer on the driving gate electrode;

a driving semiconductor layer on the gate insulating layer and comprising a channel area, a first low-resistance area, and a second low-resistance area, wherein the channel area overlaps the driving gate electrode, and the first and second low-resistance areas are at a same layer and extending at both sides of the channel area, and

a first electrode overlapping and electrically connected to one of the first low-resistance area or the second low-resistance area, and the channel area between the first electrode and the driving gate electrode in a thickness direction of the display apparatus,

wherein a width of the first sub-layer is greater than a width of the second sublayer,

the channel area is arranged along a side surface of the second sub-layer, and

the first capacitor electrode comprises a first capacitor sub-layer, which comprises a same material as the first sub-layer, and a second capacitor sub-layer, which comprises a same material as the second sub-layer.

12 . The display apparatus of claim 11 , wherein at least one of the first low-resistance area or the second low-resistance area comprises an area that does not overlap the driving gate electrode.

13 . The display apparatus of claim 11 , wherein a vertical distance between an upper surface of the substrate and the first low-resistance area is different from a vertical distance between the upper surface of the substrate and the second low-resistance area.

14 . The display apparatus of claim 11 , wherein a portion of the first capacitor electrode comprises the driving gate electrode, and

the portion of the first capacitor electrode extends to a lower portion of the driving semiconductor layer to overlap the channel area of the driving semiconductor layer.

15 . The display apparatus of claim 11 , further comprising:

a data line extending in the first direction; and

a switching thin-film transistor electrically connected to the driving thin-film transistor and the data line.

16 . The display apparatus of claim 11 , further comprising:

a sensing line extending in the first direction; and

a sensing thin-film transistor electrically connected to the driving thin-film transistor and the sensing line.

17 . The display apparatus of claim 11 , wherein a thickness of the second sub-layer is greater than a thickness of the first sub-layer.

18 . The display apparatus of claim 11 , wherein the first sub-layer comprises tail areas extending from a point at which an upper surface of the first sub-layer meets the side surface of the second sub-layer, and

a length of each tail area is equal to or greater than 1 μm.

19 . The display apparatus of claim 11 , wherein the storage capacitor further comprises a connection electrode between and overlapping the first capacitor electrode and the second capacitor electrode, and the connection electrode is in contact with the second capacitor electrode.

20 . The display apparatus of claim 19 , wherein the connection electrode is on a same layer and comprises a same material as the driving semiconductor layer.

21 . The display apparatus of claim 1 , wherein the second sub-layer overlaps the first low-resistance area and does not overlap the second low-resistance area.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 29, 2022
From: KIM, JEEHOON; KANG, DONGHAN; YANG, SHINHYUK
To: SAMSUNG DISPLAY CO., LTD.
Reel/Frame 061906/0921 →
Priority Claims (1)
KR 10-2022-0000930 · Jan 4, 2022 · national
Continuity (1)
Related Publication 20230217713A1 · Jul 6, 2023
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