IP Library › Granted Patent US 4,230,505
Granted Patent Utility
US 4,230,505 · App. 06/082,733

Method of making an impatt diode utilizing a combination of epitaxial deposition, ion implantation and substrate removal

Inventors: Chung P. Wu, Arye Rosen
Patented Case View Patent ↗
Granted: Oct 28, 1980 Filed: Oct 9, 1979
Inventors
Chung P. Wu
Arye Rosen
Assignee (at issue)
RCA Corporation

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Quick Facts
Patent No.
US 4,230,505
App. No.
06/082,733
Filed
1979-10-09
Granted
1980-10-28
Kind
A