IP Library › Granted Patent US 4,315,782
Granted Patent Utility
US 4,315,782 · App. 06/170,813

Method of making semiconductor device with passivated rectifying junctions having hydrogenated amorphous regions

Inventor: Ming L. Tarng
Patented Case View Patent ↗
Granted: Feb 16, 1982 Filed: Jul 21, 1980
Inventor
Ming L. Tarng
Assignee (at issue)
RCA Corporation

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Quick Facts
Patent No.
US 4,315,782
App. No.
06/170,813
Filed
1980-07-21
Granted
1982-02-16
Kind
A