IP Library › Granted Patent US 4,441,957
Granted Patent Utility
US 4,441,957 · App. 06/210,246

Method for selectively etching integral cathode substrate and support

Inventors: Wayne R. Poff, Donald W. Bartch
Patented Case View Patent ↗
Granted: Apr 10, 1984 Filed: Nov 25, 1980
Inventors
Wayne R. Poff
Donald W. Bartch
Assignee (at issue)
RCA Corporation

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Quick Facts
Patent No.
US 4,441,957
App. No.
06/210,246
Filed
1980-11-25
Granted
1984-04-10
Kind
A