Granted Patent
Utility
US 4,443,931 · App. 06/392,870
Method of fabricating a semiconductor device with a base region having a deep portion
Inventors:
Bantval J. Baliga, Michael Adler
Patented Case
View Patent ↗
Granted: Apr 24, 1984
Filed: Jun 28, 1982
Inventors
Bantval J. Baliga
Michael Adler
Assignee (at issue)
General Electric Company
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.