Granted Patent
Utility
US 4,499,652 · App. 06/532,259
Method of forming a MOSFET with both improved breakdown resistance and less hot-electron effects
Inventor:
Rituparna Shrivastava
Patented Case
View Patent ↗
Granted: Feb 19, 1985
Filed: Sep 15, 1983
Inventor
Rituparna Shrivastava
Assignee (at issue)
Mostek Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.