IP Library › Granted Patent US 4,599,118
Granted Patent Utility
US 4,599,118 · App. 06/654,281

Method of making MOSFET by multiple implantations followed by a diffusion step

Inventors: Yu-Pin Han, Tsiu C. Chan
Patented Case View Patent ↗
Granted: Jul 8, 1986 Filed: Sep 24, 1984
Inventors
Yu-Pin Han
Tsiu C. Chan
Assignee (at issue)
Mostek Corporation

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Quick Facts
Patent No.
US 4,599,118
App. No.
06/654,281
Filed
1984-09-24
Granted
1986-07-08
Kind
A