IP Library › Granted Patent US 4,635,088
Granted Patent Utility
US 4,635,088 · App. 06/661,837

High speed-low power consuming IGFET integrated circuit

Inventor: Hirotugu Eguchi
Patented Case View Patent ↗
Granted: Jan 6, 1987 Filed: Oct 17, 1984
Inventor
Hirotugu Eguchi
Assignee (at issue)
NIPPON ELECTRIC CO., LTD.

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Quick Facts
Patent No.
US 4,635,088
App. No.
06/661,837
Filed
1984-10-17
Granted
1987-01-06
Kind
A