Granted Patent
Utility
US 4,651,410 · App. 06/683,152
Method of fabricating regions of a bipolar microwave integratable transistor
Inventor:
Anatoly Feygenson
Patented Case
View Patent ↗
Granted: Mar 24, 1987
Filed: Dec 18, 1984
Inventor
Anatoly Feygenson
Assignee (at issue)
Semiconductor Division Thomson-CSF Components Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.