Granted Patent
Utility
US 4,685,083 · App. 06/783,493
Improved nonvolatile memory circuit using a dual node floating gate memory cell
Inventor:
Horst Leuschner
Patented Case
View Patent ↗
Granted: Aug 4, 1987
Filed: Oct 3, 1985
Inventor
Horst Leuschner
Assignee (at issue)
Thomson Components-Moster Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.