IP Library › Granted Patent US 4,763,043
Granted Patent Utility
US 4,763,043 · App. 06/812,155

P-N junction semiconductor secondary emission cathode and tube

Inventors: George H. MacMaster, Lawrence J. Nichols
Patented Case View Patent ↗
Granted: Aug 9, 1988 Filed: Dec 23, 1985
Inventors
George H. MacMaster
Lawrence J. Nichols
Assignee (at issue)
Raytheon Company

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Quick Facts
Patent No.
US 4,763,043
App. No.
06/812,155
Filed
1985-12-23
Granted
1988-08-09
Kind
A