IP Library › Granted Patent US 4,808,547
Granted Patent Utility
US 4,808,547 · App. 07/130,521

Method of fabrication of high voltage IC bopolar transistors operable to BV.sub.CBO

Inventor: James D. Beasom
Patented Case View Patent ↗
Granted: Feb 28, 1989 Filed: Dec 9, 1987
Inventor
James D. Beasom
Assignee (at issue)
HARRIS CORPORATION

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Quick Facts
Patent No.
US 4,808,547
App. No.
07/130,521
Filed
1987-12-09
Granted
1989-02-28
Kind
A