IP Library › Granted Patent US 4,891,330
Granted Patent Utility
US 4,891,330 · App. 07/174,267

Method of fabricating n-type and p-type microcrystalline semiconductor alloy material including band gap widening elements

Inventors: Subhendu Guha, Stanford R. Ovshinsky
Patented Case View Patent ↗
Granted: Jan 2, 1990 Filed: Mar 28, 1988
Inventors
Subhendu Guha
Stanford R. Ovshinsky
Assignee (at issue)
Energy Conversion Devices, Inc.

This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.

Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 4,891,330
App. No.
07/174,267
Filed
1988-03-28
Granted
1990-01-02
Kind
A