IP Library › Granted Patent US 5,024,965
Granted Patent Utility
US 5,024,965 · App. 07/481,148

Manufacturing high speed low leakage radiation hardened CMOS/SOI devices

Inventors: Chen-Chi P. Chang, Mei F. Li
Patented Case View Patent ↗
Granted: Jun 18, 1991 Filed: Feb 16, 1990
Inventors
Chen-Chi P. Chang
Mei F. Li

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Quick Facts
Patent No.
US 5,024,965
App. No.
07/481,148
Filed
1990-02-16
Granted
1991-06-18
Kind
A