IP Library › Granted Patent US 5,037,503
Granted Patent Utility
US 5,037,503 · App. 07/357,717

Method for growing silicon single crystal

Inventors: Tsutomu Kajimoto, Daizou Horie, Shin Sakurada
Patented Case View Patent ↗
Granted: Aug 6, 1991 Filed: May 26, 1989
Inventors
Tsutomu Kajimoto
Daizou Horie
Shin Sakurada
Assignees (at issue)
OSAKA TITANIUM
Kyushu Electronic Metal Co., Ltd.

This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.

Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 5,037,503
App. No.
07/357,717
Filed
1989-05-26
Granted
1991-08-06
Kind
A