Granted Patent
Utility
US 5,041,891 · App. 07/606,318
Hall IC formed in GaAs substrate
Inventor:
Tetsuo Ishii
Patented Case
View Patent ↗
Granted: Aug 20, 1991
Filed: Oct 31, 1990
Inventor
Tetsuo Ishii
Assignee (at issue)
Kabushiki Kaisha Toshiba
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.