Granted Patent
Utility
US 5,053,354 · App. 07/535,440
Method of fabricating a reverse staggered type silicon thin film transistor
Inventors:
Sakae Tanaka, Yoshiaki Watanabe, Katsuo Shirai, Yoshihisa Ogiwara
Patented Case
View Patent ↗
Granted: Oct 1, 1991
Filed: Jun 8, 1990
Inventors
Sakae Tanaka
Yoshiaki Watanabe
Katsuo Shirai
Yoshihisa Ogiwara
Assignees (at issue)
Seikosha Co., Ltd.
Nippon Precision Circuits Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.