IP Library › Granted Patent US 5,063,174
Granted Patent Utility
US 5,063,174 · App. 07/585,015

Si/Au/Ni alloyed ohmic contact to n-GaAs and fabricating process therefor

Inventors: Dana M. Beyea, Kathleen Meehan
Patented Case View Patent ↗
Granted: Nov 5, 1991 Filed: Sep 18, 1990
Inventors
Dana M. Beyea
Kathleen Meehan
Assignee (at issue)
Polaroid Corporation

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Quick Facts
Patent No.
US 5,063,174
App. No.
07/585,015
Filed
1990-09-18
Granted
1991-11-05
Kind
A