IP Library Granted Patent US 5,071,779
Granted Patent Utility
US 5,071,779 · App. 07/494,037

Method for producing a silicon thin film transistor

Inventors: Sakae Tanaka, Yoshiaki Watanabe, Katsuo Shirai, Yoshihisa Ogiwara
Patented Case View Patent ↗
Granted: Dec 10, 1991 Filed: Mar 15, 1990
Inventors
Sakae Tanaka
Yoshiaki Watanabe
Katsuo Shirai
Yoshihisa Ogiwara
Assignees (at issue)
Seikosha Co., Ltd.
Nippon Precision Circuits Inc.

This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.

Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 5,071,779
App. No.
07/494,037
Filed
1990-03-15
Granted
1991-12-10
Kind
A