IP Library › Granted Patent US 5,079,192
Granted Patent Utility
US 5,079,192 · App. 07/573,515

Method of preventing dislocation multiplication of bulk HgCdTe and LPE films during low temperature anneal in Hg vapor

Inventors: John H. Tregilgas, Dipankar Chandra
Patented Case View Patent ↗
Granted: Jan 7, 1992 Filed: Aug 24, 1990
Inventors
John H. Tregilgas
Dipankar Chandra
Assignee (at issue)
Texas Instruments Incorporated

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Quick Facts
Patent No.
US 5,079,192
App. No.
07/573,515
Filed
1990-08-24
Granted
1992-01-07
Kind
A