Granted Patent
Utility
US 5,120,669 · App. 07/651,460
Method of forming self-aligned top gate channel barrier region in ion-implanted JFET
Inventor:
Gregory A. Schrantz
Patented Case
View Patent ↗
Granted: Jun 9, 1992
Filed: Feb 6, 1991
Inventor
Gregory A. Schrantz
Assignee (at issue)
HARRIS CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.