IP Library › Granted Patent US 5,231,474
Granted Patent Utility
US 5,231,474 · App. 07/917,524

Semiconductor device with doped electrical breakdown control region

Inventor: Theodore G. Hollinger
Patented Case View Patent ↗
Granted: Jul 27, 1993 Filed: Jul 17, 1992
Inventor
Theodore G. Hollinger
Assignee (at issue)
Advanced Power Technology Corporation

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Quick Facts
Patent No.
US 5,231,474
App. No.
07/917,524
Filed
1992-07-17
Granted
1993-07-27
Kind
A