IP Library Granted Patent US 5,242,848
Granted Patent Utility
US 5,242,848 · App. 07/878,844

Self-aligned method of making a split gate single transistor non-volatile electrically alterable semiconductor memory device

Inventor: Bing Yeh
Patented Case View Patent ↗
Granted: Sep 7, 1993 Filed: May 5, 1992
Inventor
Bing Yeh
Assignee (at issue)
Silicon Storage Technology, Inc.

This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.

Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 5,242,848
App. No.
07/878,844
Filed
1992-05-05
Granted
1993-09-07
Kind
A