Granted Patent
Utility
US 5,242,848 · App. 07/878,844
Self-aligned method of making a split gate single transistor non-volatile electrically alterable semiconductor memory device
Inventor:
Bing Yeh
Patented Case
View Patent ↗
Granted: Sep 7, 1993
Filed: May 5, 1992
Inventor
Bing Yeh
Assignee (at issue)
Silicon Storage Technology, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.