Granted Patent
Utility
US 5,248,350 · App. 07/622,107
Structure for improving gate oxide integrity for a semiconductor formed by a recessed sealed sidewall field oxidation process
Inventor:
Steven S. Lee
Patented Case
View Patent ↗
Granted: Sep 28, 1993
Filed: Nov 30, 1990
Inventor
Steven S. Lee
Assignee (at issue)
NCR Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.