IP Library › Granted Patent US 5,254,507
Granted Patent Utility
US 5,254,507 · App. 07/943,686

Semi-insulating InP single crystals, semiconductor devices having substrates of the crystals and processes for producing the same

Inventors: Haruhito Shimakura, Osamu Oda, Keiji Kainosho
Patented Case View Patent ↗
Granted: Oct 19, 1993 Filed: Sep 11, 1992
Inventors
Haruhito Shimakura
Osamu Oda
Keiji Kainosho
Assignee (at issue)
Nippon Mining Company Limited

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Quick Facts
Patent No.
US 5,254,507
App. No.
07/943,686
Filed
1992-09-11
Granted
1993-10-19
Kind
A