IP Library › Granted Patent US 5,298,457
Granted Patent Utility
US 5,298,457 · App. 08/082,952

Method of making semiconductor devices using epitaxial techniques to form Si/Si-Ge interfaces and inverting the material

Inventors: William G. Einthoven, Joseph Chan, Dennis Garbis
Patented Case View Patent ↗
Granted: Mar 29, 1994 Filed: Jul 1, 1993
Inventors
William G. Einthoven
Joseph Chan
Dennis Garbis
Assignee (at issue)
GI, LLC

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Quick Facts
Patent No.
US 5,298,457
App. No.
08/082,952
Filed
1993-07-01
Granted
1994-03-29
Kind
A